Invention Grant
- Patent Title: Semiconductor device and substrate with chalcogen doped region
- Patent Title (中): 半导体器件和具有硫属元素掺杂区的衬底
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Application No.: US13709786Application Date: 2012-12-10
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Publication No.: US09159783B2Publication Date: 2015-10-13
- Inventor: Gerhard Schmidt , Hans-Joachim Schulze , Bernd Kolbesen
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Main IPC: H01L29/06
- IPC: H01L29/06 ; H01L21/223 ; H01L21/225 ; H01L21/265 ; H01L29/66 ; H01L29/78 ; H01L29/08 ; H01L29/10 ; H01L29/167
Abstract:
A semiconductor substrate includes a first side and a second side opposite the first side. A semiconductor material extends between the first and second sides and is devoid of active device regions. The semiconductor material has a first region and a second region. The first region extends from the first side to a depth into the semiconductor material and includes chalcogen dopant atoms which provide a base doping concentration for the first region. The second region extends from the first region to the second side and is devoid of base doping. Further, a power semiconductor component is provided.
Public/Granted literature
- US20130119522A1 Semiconductor Device and Substrate with Chalcogen Doped Region Public/Granted day:2013-05-16
Information query
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