发明授权
- 专利标题： Semiconductor device and method of manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US13476356申请日： 2012-05-21
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公开(公告)号： US09159843B2公开(公告)日： 2015-10-13
- 发明人: Kentaro Saito , Kazumasa Yanagisawa , Yasushi Ishii , Koichi Toba
- 申请人： Kentaro Saito , Kazumasa Yanagisawa , Yasushi Ishii , Koichi Toba
- 申请人地址： JP Tokyo
- 专利权人： Renesas Electronics Corporation
- 当前专利权人： Renesas Electronics Corporation
- 当前专利权人地址： JP Tokyo
- 代理机构： Miles & Stockbridge P.C.
- 优先权： JP2011-118722 20110527
- 主分类号： H01L29/778
- IPC分类号： H01L29/778 ; H01L21/336 ; H01L29/792 ; H01L21/28 ; H01L27/115 ; H01L29/423 ; H01L29/66 ; G11C16/04
摘要：
To improve the electric performance and reliability of a semiconductor device. A memory gate electrode of a split gate type nonvolatile memory is a metal gate electrode formed from a stacked film of a metal film 6a and a silicon film 6b over the metal film 6a. In an upper end part of the metal film 6a, a metal oxide portion 17 is formed by oxidation of a part of the metal film 6a. A control gate electrode of the split gate type nonvolatile memory is a metal gate electrode formed from a stacked film of a metal film 4a and the silicon film 4b over the metal film 4a.