Invention Grant
- Patent Title: Method of analyzing photolithography processes
- Patent Title (中): 分析光刻工艺的方法
-
Application No.: US13908608Application Date: 2013-06-03
-
Publication No.: US09165354B2Publication Date: 2015-10-20
- Inventor: Woong-Kyu Son , Hyo-Cheon Kang , Deok-Yong Kim , Jae-Kwan Park , Jeong-Ho Ahn , Soo-Bok Chin
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2012-0084001 20120731
- Main IPC: G06K9/00
- IPC: G06K9/00 ; G06T7/00 ; G06T7/40
Abstract:
Methods of analyzing photolithography processes are provided. The methods may include obtaining an image from a pattern formed on a wafer and obtaining dimensions of the image. The methods may further include converting the dimensions into a profile graph and then dividing the profile graph into a low-frequency band profile graph and a high-frequency band profile graph.
Public/Granted literature
- US20140037186A1 METHOD OF ANALYZING PHOTOLITHOGRAPHY PROCESSES Public/Granted day:2014-02-06
Information query
