公开(公告)号：US20140268170A1

公开(公告)日：2014-09-18

申请号：US14101741

申请日：2013-12-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong-Cheon Sun ,  Jeong-Ho Ahn ,  Dong-Ryul Lee ,  Dong-Chul Ihm

IPC: G01B11/22

CPC classification number: G01N21/9505

Abstract: Provided are an apparatus and a method for estimating a depth of a buried defect in a substrate. The apparatus for estimating a depth of a buried defect in a substrate includes a light source providing a source of light, an aperture through which only a part of the source of light passes, a reflecting mirror receiving and reflecting the source of light that has passed through the aperture as a first light, a lens receiving and condensing the first light, the substrate receiving and reflecting the condensed first light as a second light, a light sensor receiving the second light and sensing a brightness of the second light, and a position adjustment portion adjusting a distance between the lens and the substrate.

Abstract translation: 提供了一种用于估计衬底中的埋入缺陷的深度的装置和方法。 用于估计衬底中的埋入缺陷的深度的装置包括提供光源的光源，光源只有一部分通过的孔，反射已经通过的光源的反射镜 通过作为第一光的光圈，接收和聚光第一光的透镜，接收并反射作为第二光的聚集的第一光的基板，接收第二光并感测第二光的亮度的光传感器，以及位置 调节部分调整透镜和基板之间的距离。

公开(公告)号：US09165354B2

公开(公告)日：2015-10-20

申请号：US13908608

申请日：2013-06-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woong-Kyu Son ,  Hyo-Cheon Kang ,  Deok-Yong Kim ,  Jae-Kwan Park ,  Jeong-Ho Ahn ,  Soo-Bok Chin

IPC: G06K9/00 ,  G06T7/00 ,  G06T7/40

CPC classification number: G06T7/0004 ,  G06T7/0006 ,  G06T7/42 ,  G06T2207/10061 ,  G06T2207/20056 ,  G06T2207/30148

Abstract: Methods of analyzing photolithography processes are provided. The methods may include obtaining an image from a pattern formed on a wafer and obtaining dimensions of the image. The methods may further include converting the dimensions into a profile graph and then dividing the profile graph into a low-frequency band profile graph and a high-frequency band profile graph.

Abstract translation: 提供了分析光刻工艺的方法。 所述方法可以包括从形成在晶片上的图案获得图像并获得图像的尺寸。 所述方法还可以包括将维度转换成简档图，然后将简档图划​​分成低频带轮廓图和高频带轮廓图。

公开(公告)号：US20140037186A1

公开(公告)日：2014-02-06

申请号：US13908608

申请日：2013-06-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Woong-Kyu Son ,  Hyo-Cheon Kang ,  Deok-Yong Kim ,  Jae-Kwan Park ,  Jeong-Ho Ahn ,  Soo-Bok Chin

IPC: G06T7/00

CPC classification number: G06T7/0004 ,  G06T7/0006 ,  G06T7/42 ,  G06T2207/10061 ,  G06T2207/20056 ,  G06T2207/30148

Abstract: Methods of analyzing photolithography processes are provided. The methods may include obtaining an image from a pattern formed on a wafer and obtaining dimensions of the image. The methods may further include converting the dimensions into a profile graph and then dividing the profile graph into a low-frequency band profile graph and a high-frequency band profile graph.

Abstract translation: 提供了分析光刻工艺的方法。 所述方法可以包括从形成在晶片上的图案获得图像并获得图像的尺寸。 所述方法还可以包括将维度转换成简档图，然后将简档图划​​分成低频带轮廓图和高频带轮廓图。