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公开(公告)号：US09165354B2
公开(公告)日：2015-10-20
申请号：US13908608
申请日：2013-06-03
Applicant: Samsung Electronics Co., Ltd.
Inventor： Woong-Kyu Son , Hyo-Cheon Kang , Deok-Yong Kim , Jae-Kwan Park , Jeong-Ho Ahn , Soo-Bok Chin
CPC classification number: G06T7/0004 , G06T7/0006 , G06T7/42 , G06T2207/10061 , G06T2207/20056 , G06T2207/30148
Abstract: Methods of analyzing photolithography processes are provided. The methods may include obtaining an image from a pattern formed on a wafer and obtaining dimensions of the image. The methods may further include converting the dimensions into a profile graph and then dividing the profile graph into a low-frequency band profile graph and a high-frequency band profile graph.
Abstract translation: 提供了分析光刻工艺的方法。 所述方法可以包括从形成在晶片上的图案获得图像并获得图像的尺寸。 所述方法还可以包括将维度转换成简档图，然后将简档图划分成低频带轮廓图和高频带轮廓图。
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公开(公告)号：US20140037186A1
公开(公告)日：2014-02-06
申请号：US13908608
申请日：2013-06-03
Applicant: Samsung Electronics Co., Ltd.
Inventor： Woong-Kyu Son , Hyo-Cheon Kang , Deok-Yong Kim , Jae-Kwan Park , Jeong-Ho Ahn , Soo-Bok Chin
IPC: G06T7/00
CPC classification number: G06T7/0004 , G06T7/0006 , G06T7/42 , G06T2207/10061 , G06T2207/20056 , G06T2207/30148
Abstract: Methods of analyzing photolithography processes are provided. The methods may include obtaining an image from a pattern formed on a wafer and obtaining dimensions of the image. The methods may further include converting the dimensions into a profile graph and then dividing the profile graph into a low-frequency band profile graph and a high-frequency band profile graph.
Abstract translation: 提供了分析光刻工艺的方法。 所述方法可以包括从形成在晶片上的图案获得图像并获得图像的尺寸。 所述方法还可以包括将维度转换成简档图，然后将简档图划分成低频带轮廓图和高频带轮廓图。
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