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    Apparatus and method for monitoring semiconductor fabrication processes using polarized light
    1.
    发明授权
    Apparatus and method for monitoring semiconductor fabrication processes using polarized light 有权
    使用偏振光监测半导体制造工艺的装置和方法

    公开(公告)号：US09322771B2

    公开(公告)日：2016-04-26

    申请号：US14197608

    申请日：2014-03-05

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Woong-Kyu Son ,  Kwang-Hoon Kim ,  Deok-Yong Kim ,  Sung-Soo Moon ,  Jung-Hoon Byun ,  Ji-Hye Lee ,  Choon-Shik Leem ,  Soo-Bok Chin

    IPC: G01N21/33 ,  G01N21/21 ,  G03F7/22 ,  G03F7/20

    CPC classification number: H01L22/12 ,  G01N21/21 ,  G01N21/33 ,  G01N21/8806 ,  G01N21/9501 ,  G01N21/95607 ,  G01N2021/8848 ,  G03F7/70625

    Abstract: The inventive concept provides apparatuses and methods for monitoring semiconductor fabrication processes in real time using polarized light. In some embodiments, the apparatus comprises a light source configured to generate light, a beam splitter configured to reflect the light toward the wafer being processed, an objective polarizer configured to polarize the light reflected toward the wafer and to allow light reflected by the wafer to pass therethrough, a blaze grating configured to separate light reflected by the wafer according to wavelength, an array detector configured to detect the separated light and an analyzer to analyze the three-dimensional profile of the structure/pattern being formed in the wafer.

    Abstract translation: 本发明的概念提供了使用偏振光来实时监控半导体制造工艺的装置和方法。 在一些实施例中，该装置包括被配置为产生光的光源，被配置为将光朝向正被处理的晶片反射的分束器，物镜偏振器，被配置为使朝向晶片反射的光偏振，并允许由晶片反射的光 通过其配置成根据波长分离由晶片反射的光的火焰光栅，被配置为检测分离的光的阵列检测器和分析器，以分析在晶片中形成的结构/图案的三维轮廓。

    METHODS AND APPARATUSES FOR MEASURING VALUES OF PARAMETERS OF INTEGRATED CIRCUIT DEVICES
    5.
    发明申请
    METHODS AND APPARATUSES FOR MEASURING VALUES OF PARAMETERS OF INTEGRATED CIRCUIT DEVICES 审中-公开
    用于测量集成电路设备参数值的方法和装置

    公开(公告)号：US20150219446A1

    公开(公告)日：2015-08-06

    申请号：US14614646

    申请日：2015-02-05

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Choon-Shik LEEM ,  Woo-Jin Jung ,  Ji-Hye Lee ,  Deok-Yong Kim ,  Chul-Gi Song ,  Soo-Bok Chin

    IPC: G01B11/24 ,  G01N21/21

    CPC classification number: G01B11/24 ,  G01B2210/56 ,  G01N2021/213 ,  G03F7/70625 ,  H01L22/12

    Abstract: Methods and apparatuses for measuring parameters of integrated circuit devices may be provided. The methods may include performing detecting operations on samples to obtain a set of data. Each detecting operation may include irradiating a light beam to the samples using a light irradiation part and detecting reflected light from the samples using a light detector. The samples may have values of a parameter different from one another. The method may also include obtaining a principal component based on the set of data and obtaining a regression model for the parameter using the principal component and values of the parameter of the samples.

    Abstract translation: 可以提供用于测量集成电路装置的参数的方法和装置。 这些方法可以包括对样本执行检测操作以获得一组数据。 每个检测操作可以包括使用光照射部分将光束照射到样品上，并使用光检测器检测来自样品的反射光。 样本可以具有彼此不同的参数的值。 该方法还可以包括基于该组数据获得主成分，并使用主要分量和样本参数的值获得参数的回归模型。

    Method for detecting defect of substrate
    6.
    发明授权
    Method for detecting defect of substrate 有权
    检测基板缺陷的方法

    公开(公告)号：US08890069B2

    公开(公告)日：2014-11-18

    申请号：US14230506

    申请日：2014-03-31

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jong-Cheon Sun ,  Hyung-Seop Kim ,  Hee-Won Sunwoo ,  Byoung-Ho Lee ,  Dong-Chul Ihm ,  Soo-Bok Chin

    IPC: H01J37/153 ,  G01N23/203 ,  G01N23/225 ,  H01J37/26

    CPC classification number: G01N23/2251 ,  G01N2223/611 ,  G01N2223/6462 ,  H01J37/26 ,  H01J37/3178

    Abstract: A method for detecting defects includes irradiating at least one electron beam into a first region of a substrate, irradiating at least one electron beam into a second region electrically connected to the first region, and detecting secondary electrons emitted from the second region. The electron beam irradiated into the first region may be the same or different from the electron beam irradiated into the second region. Alternatively, different beams may be simultaneously irradiated into the first and second regions. An image generated based on the secondary electrons shows a defect in the substrate as a region having a grayscale difference with other regions in the image.

    Abstract translation: 一种用于检测缺陷的方法包括将至少一个电子束照射到衬底的第一区域中，将至少一个电子束照射到与第一区域电连接的第二区域中，以及检测从第二区域发射的二次电子。 照射到第一区域的电子束可以与照射到第二区域的电子束相同或不同。 或者，可以将不同的光束同时照射到第一和第二区域中。 基于二次电子产生的图像在基板中显示出与图像中的其它区域具有灰度差的区域的缺陷。

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