Invention Grant
- Patent Title: Method of vapor-diffusing impurities
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Application No.: US13954472Application Date: 2013-07-30
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Publication No.: US09171722B2Publication Date: 2015-10-27
- Inventor: Kazuya Takahashi , Yoshikazu Furusawa , Mitsuhiro Okada
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Nath, Goldberg & Meyer
- Agent Jerald L. Meyer
- Priority: JP2012-168724 20120730; JP2013-101309 20130513
- Main IPC: H01L21/22
- IPC: H01L21/22 ; H01L21/223 ; H01L21/67
Abstract:
A method of vapor-diffusing impurities into a diffusion region of a target substrate to be processed using a dummy substrate is provided. The method includes loading the target substrate and the dummy substrate in a substrate loading jig, accommodating the substrate loading jig loaded with the target substrate and the dummy substrate in a processing chamber of a processing apparatus, and vapor-diffusing impurities into the diffusion region of the target substrate in the processing chamber having the accommodated substrate loading jig. The vapor-diffused impurities are boron, an outer surface of the dummy substrate includes a material having properties not allowing boron adsorption.
Public/Granted literature
- US09478423B2 Method of vapor-diffusing impurities Public/Granted day:2016-10-25
Information query
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