Invention Grant
- Patent Title: Semiconductor light emitting device
- Patent Title (中): 半导体发光器件
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Application No.: US14255854Application Date: 2014-04-17
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Publication No.: US09171997B2Publication Date: 2015-10-27
- Inventor: Eun Deok Sim , Sang Jo Kim , Sung Tae Kim , Young Sun Kim , Seong Ju Park , Suk Ho Yoon , Sang Jun Lee
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-Si, Gyeonggi-Do KR Gwangju
- Assignee: SAMSUNG ELECTRONICS CO., LTD.,GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.,GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do KR Gwangju
- Agency: McDermott Will & Emery LLP
- Priority: KR10-2013-0059941 20130527
- Main IPC: H01L31/0328
- IPC: H01L31/0328 ; H01L27/15 ; H01L21/00 ; H01L33/06 ; H01L33/32 ; H01L33/00 ; H01L33/38
Abstract:
A semiconductor light emitting device is provided including a first conductivity-type semiconductor layer, an active layer including at least one quantum barrier layer made of InxGa(1-x)N, wherein 0≦x
Public/Granted literature
- US20140346437A1 SEMICONDUCTOR LIGHT EMITTING DEVICE Public/Granted day:2014-11-27
Information query
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