Invention Grant
- Patent Title: Semiconductor light emitting device
- Patent Title (中): 半导体发光器件
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Application No.: US14158729Application Date: 2014-01-17
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Publication No.: US09172008B2Publication Date: 2015-10-27
- Inventor: Kyung Wook Hwang , Jung Sub Kim
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: McDermott Will & Emery LLP
- Priority: KR10-2013-0008310 20130124
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/50 ; H01L33/12 ; H01L33/10 ; H01L33/26 ; H01L33/32 ; H01L33/08 ; H01L33/24

Abstract:
A semiconductor light emitting device includes a light-transmissive substrate, a light-transmissive buffer layer disposed on the light-transmissive substrate, and a light emitting structure. The light-transmissive buffer layer includes a first layer and a second layer having different refractive indices and disposed alternately at least once. The light emitting structure includes a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially disposed on the buffer layer.
Public/Granted literature
- US20140203292A1 SEMICONDUCTOR LIGHT EMITTING DEVICE Public/Granted day:2014-07-24
Information query
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