Invention Grant
US09177370B2 Systems and methods of advanced site-based nanotopography for wafer surface metrology
有权
用于晶片表面计量的先进的基于位点的纳米形貌的系统和方法
- Patent Title: Systems and methods of advanced site-based nanotopography for wafer surface metrology
- Patent Title (中): 用于晶片表面计量的先进的基于位点的纳米形貌的系统和方法
-
Application No.: US13779947Application Date: 2013-02-28
-
Publication No.: US09177370B2Publication Date: 2015-11-03
- Inventor: Haiguang Chen , Sergey Kamensky , Jaydeep Sinha , Pradeep Vukkadala
- Applicant: KLA-Tencor Corporation
- Applicant Address: US CA Milpitas
- Assignee: KLA-Tencor Corporation
- Current Assignee: KLA-Tencor Corporation
- Current Assignee Address: US CA Milpitas
- Agency: Suiter Swantz pc llo
- Main IPC: G06K9/00
- IPC: G06K9/00 ; G06T7/00

Abstract:
Systems and methods for providing micro defect inspection capabilities for optical systems are disclosed. Each given wafer image is filtered, treated and normalized prior to performing surface feature detection and quantification. A partitioning scheme is utilized to partition the wafer image into a plurality of measurement sites and metric values are calculated for each of the plurality of measurement sites. Furthermore, transformation steps may also be utilized to extract additional process relevant metric values for analysis purposes.
Public/Granted literature
- US20130236085A1 Systems and Methods of Advanced Site-Based Nanotopography for Wafer Surface Metrology Public/Granted day:2013-09-12
Information query