发明授权
- 专利标题： Protective structure and method for producing a protective structure
- 专利标题（中）： 用于生产保护结构的保护结构和方法
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申请号： US14566751申请日： 2014-12-11
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公开(公告)号： US09177950B2公开(公告)日： 2015-11-03
- 发明人: Andre Schmenn , Damian Sojka , Carsten Ahrens
- 申请人： Infineon Technologies AG
- 申请人地址： DE Neubiberg
- 专利权人： INFINEON TECHNOLOGIES AG
- 当前专利权人： INFINEON TECHNOLOGIES AG
- 当前专利权人地址： DE Neubiberg
- 优先权： DE102007024355 20070524
- 主分类号： H01L29/76
- IPC分类号： H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119 ; H01L27/02 ; H01L29/66 ; H01L29/868 ; H01L21/22 ; H01L21/265
摘要：
Described herein is a protective structure. The protective structure includes a semiconductor substrate, a first diode disposed at least one of in or on the semiconductor substrate and a diode arrangement disposed at least one of in or on the semiconductor substrate. The diode arrangement includes a stack of a second diode and a transient voltage suppressor (TVS) diode connected in series with the second diode. The diode arrangement is in parallel with the first diode.
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