发明授权
- 专利标题: Sputtering target of ferromagnetic material with low generation of particles
- 专利标题(中): 铁磁材料的溅射靶与低代粒子
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申请号: US13808938申请日: 2011-01-28
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公开(公告)号: US09181617B2公开(公告)日: 2015-11-10
- 发明人: Shin-ichi Ogino , Atsushi Sato , Yuichiro Nakamura , Atsutoshi Arakawa
- 申请人: Shin-ichi Ogino , Atsushi Sato , Yuichiro Nakamura , Atsutoshi Arakawa
- 申请人地址: JP Tokyo
- 专利权人: JX Nippon Mining & Metals Corporation
- 当前专利权人: JX Nippon Mining & Metals Corporation
- 当前专利权人地址: JP Tokyo
- 代理机构: Howson & Howson LLP
- 优先权: JP2010-163328 20100720; JP2010-283152 20101220
- 国际申请: PCT/JP2011/051766 WO 20110128
- 国际公布: WO2012/011294 WO 20120126
- 主分类号: H01F41/18
- IPC分类号: H01F41/18 ; C23C14/34 ; C22C1/04 ; C22C19/07 ; C22C32/00 ; C22F1/10 ; G11B5/851 ; H01F10/16
摘要:
Provided is a sputtering target of ferromagnetic material comprising a metal having a composition containing 20 mol % or less of Cr, and Co as the remainder; wherein the target structure includes a phase (A) which is a basis metal, and metal phases (B) having a component composition different from the peripheral texture within the phase (A), the area ratio occupied by oxides within 1 μm from the most outer periphery of metal phases (B) is 80% or less, and the average grain size of the metal phases (B) is 10 μm or more and 150 μm or less. Provided is a sputtering target of ferromagnetic material capable of inhibiting the generation of particles during sputtering, and improving the pass-through flux to achieve a stable electrical discharge with a magnetron sputtering device.
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