发明授权
- 专利标题： Light emitting diode and light emitting diode lamp
- 专利标题（中）： 发光二极管和发光二极管灯
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申请号： US13809294申请日： 2011-07-08
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公开(公告)号： US09184345B2公开(公告)日： 2015-11-10
- 发明人: Noriyoshi Seo , Atsushi Matsumura , Ryouichi Takeuchi
- 申请人： Noriyoshi Seo , Atsushi Matsumura , Ryouichi Takeuchi
- 申请人地址： JP Tokyo
- 专利权人： SHOWA DENKO K.K
- 当前专利权人： SHOWA DENKO K.K
- 当前专利权人地址： JP Tokyo
- 代理机构： Sughrue Mion, PLLC
- 优先权： JP2010-158655 20100713; JP2010-183207 20100818
- 国际申请： PCT/JP2011/065694 WO 20110708
- 国际公布： WO2012/008379 WO 20120119
- 主分类号： H01L33/30
- IPC分类号： H01L33/30 ; H01L33/06 ; A01G9/26 ; H01L33/12 ; H01L33/40
摘要：
A light emitting diode is provided by the present invention which includes a pn junction-type light emitting unit having a light emitting layer (10) composed of n layers of a strained light emitting layer (12) and n−1 layers of a barrier layer (13), wherein when a barrier layer exists, the light emitting layer (10) has a structure in which one strained light emitting layer (12) and one barrier layer (13) are laminated alternately, n represents an integer of 1 to 7, and the thickness of the light emitting layer (10) is not more than 250 nm.
公开/授权文献
- US20130112999A1 LIGHT EMITTING DIODE AND LIGHT EMITTING DIODE LAMP 公开/授权日：2013-05-09
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