Invention Grant
US09190263B2 Method for forming SiOCH film using organoaminosilane annealing
有权
使用有机氨基硅烷退火形成SiOCH膜的方法
- Patent Title: Method for forming SiOCH film using organoaminosilane annealing
- Patent Title (中): 使用有机氨基硅烷退火形成SiOCH膜的方法
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Application No.: US13973777Application Date: 2013-08-22
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Publication No.: US09190263B2Publication Date: 2015-11-17
- Inventor: Dai Ishikawa , Kiyohiro Matsushita , Akinori Nakano , Shintaro Ueda , Hirofumi Arai
- Applicant: ASM IP Holding B.V.
- Applicant Address: NL Almere
- Assignee: ASM IP Holding B.V.
- Current Assignee: ASM IP Holding B.V.
- Current Assignee Address: NL Almere
- Agency: Snell & Wilmer LLP
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/469 ; H01L21/02 ; H01L21/67
Abstract:
A method for forming a modified low-k SiOCH film on a substrate, includes: providing a low-k SiOCH film formed on a substrate by flowable CVD; exposing the low-k SiOCH film to a gas containing a Si—N bond in its molecule without applying electromagnetic energy to increase Si—O bonds and/or Si—C bonds in the film; and then curing the low-k SiOCH film.
Public/Granted literature
- US20150056821A1 Method for Forming SiOCH Film Using Organoaminosilane Annealing Public/Granted day:2015-02-26
Information query
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