公开(公告)号：US20150118864A1

公开(公告)日：2015-04-30

申请号：US14069244

申请日：2013-10-31

Applicant: ASM IP Holding B.V.

Inventor： Akinori Nakano ,  Shintaro Ueda ,  Dai Ishikawa ,  Kiyohiro Matsushita

IPC: H01L21/02

CPC classification number: H01L21/02126 ,  H01L21/02274 ,  H01L21/02277 ,  H01L21/0234 ,  H01L21/02348

Abstract: A method for forming a gap-fill SiOCH film on a patterned substrate includes: (i) providing a substrate having recessed features on its surface; (ii) filling the recessed features of the substrate with a SiOCH film which is flowable and non-porous; (iii) after completion of step (ii), exposing the SiOCH film to a plasma including a hydrogen plasma; and (iv) curing the plasma-exposed SiOCH film with UV light.

Abstract translation: 在图案化衬底上形成间隙填充SiOCH膜的方法包括：（i）提供在其表面上具有凹陷特征的衬底; （ii）用可流动且无孔的SiOCH膜填充基底的凹陷特征; （iii）步骤（ii）完成后，将SiOCH膜暴露于包括氢等离子体的等离子体; 和（iv）用UV光固化等离子体暴露的SiOCH膜。

公开(公告)号：US20140363983A1

公开(公告)日：2014-12-11

申请号：US13912666

申请日：2013-06-07

Applicant: ASM IP Holding B.V.

Inventor： Akinori Nakano ,  Shintaro Ueda

IPC: H01L21/02

CPC classification number: H01L21/02112 ,  C23C16/02 ,  C23C16/401 ,  H01L21/0201 ,  H01L21/02115 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02277 ,  H01L21/76834 ,  H01L21/76837

Abstract: A method for filling recesses of a substrate with an insulation film includes: (i) exposing surfaces of the recesses of the substrate to a pre-deposition gas in a reactive state in a reaction space to treat the surfaces with reactive hydrocarbons generated from the pre-deposition gas without filling the recesses; and (ii) depositing a flowable insulation film using a process gas other than the pre-deposition gas on a surface of the substrate to fill the recesses treated in step (i) therewith by plasma reaction. The pre-deposition gas has at least one hydrocarbon unit in its molecule.

Abstract translation: 用绝缘膜填充基板的凹部的方法包括：（i）将基板的凹部的表面暴露于处于反应状态的反应性状态的预沉积气体，以便在由表面产生的活性烃 - 不填充凹槽的沉积气体; 和（ii）使用除了预沉积气体之外的处理气体在基板的表面上沉积可流动的绝缘膜，以通过等离子体反应填充步骤（i）中处理的凹部。 预沉积气体在其分子中具有至少一个烃单元。

公开(公告)号：US09117657B2

公开(公告)日：2015-08-25

申请号：US13912666

申请日：2013-06-07

Applicant: ASM IP Holding B.V.

Inventor： Akinori Nakano ,  Shintaro Ueda

IPC: H01L21/02

CPC classification number: H01L21/02112 ,  C23C16/02 ,  C23C16/401 ,  H01L21/0201 ,  H01L21/02115 ,  H01L21/02126 ,  H01L21/022 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/02277 ,  H01L21/76834 ,  H01L21/76837

Abstract: A method for filling recesses of a substrate with an insulation film includes: (i) exposing surfaces of the recesses of the substrate to a pre-deposition gas in a reactive state in a reaction space to treat the surfaces with reactive hydrocarbons generated from the pre-deposition gas without filling the recesses; and (ii) depositing a flowable insulation film using a process gas other than the pre-deposition gas on a surface of the substrate to fill the recesses treated in step (i) therewith by plasma reaction. The pre-deposition gas has at least one hydrocarbon unit in its molecule.

Abstract translation: 用绝缘膜填充基板的凹部的方法包括：（i）将基板的凹部的表面暴露于处于反应状态的反应性状态的预沉积气体，以便在由表面产生的活性烃 - 不填充凹槽的沉积气体; 和（ii）使用除了预沉积气体之外的处理气体在基板的表面上沉积可流动的绝缘膜，以通过等离子体反应填充步骤（i）中处理的凹部。 预沉积气体在其分子中具有至少一个烃单元。

公开(公告)号：US09190263B2

公开(公告)日：2015-11-17

申请号：US13973777

申请日：2013-08-22

Applicant: ASM IP Holding B.V.

Inventor： Dai Ishikawa ,  Kiyohiro Matsushita ,  Akinori Nakano ,  Shintaro Ueda ,  Hirofumi Arai

IPC: H01L21/31 ,  H01L21/469 ,  H01L21/02 ,  H01L21/67

CPC classification number: H01L21/02126 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02323 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/67115 ,  H01L21/67207

Abstract: A method for forming a modified low-k SiOCH film on a substrate, includes: providing a low-k SiOCH film formed on a substrate by flowable CVD; exposing the low-k SiOCH film to a gas containing a Si—N bond in its molecule without applying electromagnetic energy to increase Si—O bonds and/or Si—C bonds in the film; and then curing the low-k SiOCH film.

Abstract translation: 在衬底上形成修饰的低k SiOCH膜的方法包括：通过可流动CVD提供在衬底上形成的低k SiOCH膜; 将低k SiOCH膜暴露于其分子中含有Si-N键的气体，而不施加电磁能以增加膜中的Si-O键和/或Si-C键; 然后固化低k SiOCH膜。

公开(公告)号：US09029272B1

公开(公告)日：2015-05-12

申请号：US14069244

申请日：2013-10-31

Applicant: ASM IP Holding B.V.

Inventor： Akinori Nakano ,  Shintaro Ueda ,  Dai Ishikawa ,  Kiyohiro Matsushita

IPC: H01L21/02

CPC classification number: H01L21/02126 ,  H01L21/02274 ,  H01L21/02277 ,  H01L21/0234 ,  H01L21/02348

Abstract: A method for forming a gap-fill SiOCH film on a patterned substrate includes: (i) providing a substrate having recessed features on its surface; (ii) filling the recessed features of the substrate with a SiOCH film which is flowable and non-porous; (iii) after completion of step (ii), exposing the SiOCH film to a plasma including a hydrogen plasma; and (iv) curing the plasma-exposed SiOCH film with UV light.

Abstract translation: 在图案化衬底上形成间隙填充SiOCH膜的方法包括：（i）提供在其表面上具有凹陷特征的衬底; （ii）用可流动且无孔的SiOCH膜填充基底的凹陷特征; （iii）步骤（ii）完成后，将SiOCH膜暴露于包括氢等离子体的等离子体; 和（iv）用UV光固化等离子体暴露的SiOCH膜。

公开(公告)号：US20150056821A1

公开(公告)日：2015-02-26

申请号：US13973777

申请日：2013-08-22

Applicant: ASM IP Holding B.V.

Inventor： Dai Ishikawa ,  Kiyohiro Matsushita ,  Akinori Nakano ,  Shintaro Ueda ,  Hirofumi Arai

IPC: H01L21/02

CPC classification number: H01L21/02126 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02323 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/67115 ,  H01L21/67207

Abstract: A method for forming a modified low-k SiOCH film on a substrate, includes: providing a low-k SiOCH film formed on a substrate by flowable CVD; exposing the low-k SiOCH film to a gas containing a Si—N bond in its molecule without applying electromagnetic energy to increase Si—O bonds and/or Si—C bonds in the film; and then curing the low-k SiOCH film.

Abstract translation: 在衬底上形成修饰的低k SiOCH膜的方法包括：通过可流动CVD提供在衬底上形成的低k SiOCH膜; 将低k SiOCH膜暴露于其分子中含有Si-N键的气体，而不施加电磁能以增加膜中的Si-O键和/或Si-C键; 然后固化低k SiOCH膜。