公开(公告)号：US20160093485A1

公开(公告)日：2016-03-31

申请号：US14498036

申请日：2014-09-26

Applicant: ASM IP Holding B.V.

Inventor： Akiko Kobayashi ,  Akinori Nakano ,  Dai Ishikawa ,  Kiyohiro Matsushita

IPC: H01L21/02

CPC classification number: H01L21/0228 ,  C23C16/45542 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02359 ,  H01L21/02362 ,  H01L21/3105

Abstract: A method is for hydrophobization of a surface of a silicon-containing film by atomic layer deposition (ALD), wherein the surface is subjected to atmospheric exposure. The method includes: (i) providing a substrate with a silicon-containing film formed thereon; and (ii) forming on a surface of the silicon-containing film a hydrophobic atomic layer as a protective layer subjected to atmospheric exposure, by exposing the surface to a silicon-containing treating gas without exciting the gas. The treating gas is capable of being chemisorbed on the surface to form a hydrophobic atomic layer thereon.

Abstract translation: 一种方法是通过原子层沉积（ALD）使含硅膜的表面疏水化，其中该表面经受大气暴露。 该方法包括：（i）向基板提供其上形成的含硅膜; 和（ii）通过将表面暴露于含硅处理气体而不使气体激发，在作为经受大气暴露的保护层的疏水性原子层的表面上形成含硅膜的表面。 处理气体能够在表面上被化学吸附以在其上形成疏水原子层。

公开(公告)号：US20150118864A1

公开(公告)日：2015-04-30

申请号：US14069244

申请日：2013-10-31

Applicant: ASM IP Holding B.V.

Inventor： Akinori Nakano ,  Shintaro Ueda ,  Dai Ishikawa ,  Kiyohiro Matsushita

IPC: H01L21/02

CPC classification number: H01L21/02126 ,  H01L21/02274 ,  H01L21/02277 ,  H01L21/0234 ,  H01L21/02348

Abstract: A method for forming a gap-fill SiOCH film on a patterned substrate includes: (i) providing a substrate having recessed features on its surface; (ii) filling the recessed features of the substrate with a SiOCH film which is flowable and non-porous; (iii) after completion of step (ii), exposing the SiOCH film to a plasma including a hydrogen plasma; and (iv) curing the plasma-exposed SiOCH film with UV light.

Abstract translation: 在图案化衬底上形成间隙填充SiOCH膜的方法包括：（i）提供在其表面上具有凹陷特征的衬底; （ii）用可流动且无孔的SiOCH膜填充基底的凹陷特征; （iii）步骤（ii）完成后，将SiOCH膜暴露于包括氢等离子体的等离子体; 和（iv）用UV光固化等离子体暴露的SiOCH膜。

公开(公告)号：US08785215B2

公开(公告)日：2014-07-22

申请号：US13901341

申请日：2013-05-23

Applicant: ASM IP Holding B.V.

Inventor： Akiko Kobayashi ,  Yosuke Kimura ,  Dai Ishikawa ,  Kiyohiro Matsushita

IPC: H01L21/00 ,  H01L21/768

CPC classification number: H01L21/76825 ,  C23C16/045 ,  C23C16/45527 ,  H01L21/02167 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76831

Abstract: A method for repairing process-related damage of a dielectric film includes: (i) adsorbing a first gas containing silicon on a surface of the damaged dielectric film without depositing a film in the absence of reactive species, (ii) adsorbing a second gas containing silicon on a surface of the dielectric film, followed by applying reactive species to the surface of the dielectric film, to form a monolayer film thereon, and (iii) repeating step (ii). The duration of exposing the surface to the first gas in step (i) is longer than the duration of exposing the surface to the second gas in step (ii).

Abstract translation: 一种用于修复电介质膜的工艺相关损伤的方法包括：（i）在不存在反应性物质的情况下，在不沉积膜的情况下，在损坏的电介质膜的表面上吸附含硅的第一气体，（ii）吸附含有 在电介质膜的表面上形成硅，然后在电介质膜的表面上施加反应性物质，以在其上形成单层膜，和（iii）重复步骤（ii）。 在步骤（i）中将表面暴露于第一气体的持续时间比在步骤（ii）中将表面暴露于第二气体的持续时间长。

公开(公告)号：US20130337583A1

公开(公告)日：2013-12-19

申请号：US13901341

申请日：2013-05-23

Applicant: ASM IP Holding B.V.

Inventor： Akiko Kobayashi ,  Yosuke Kimura ,  Dai Ishikawa ,  Kiyohiro Matsushita

IPC: H01L21/768

CPC classification number: H01L21/76825 ,  C23C16/045 ,  C23C16/45527 ,  H01L21/02167 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3105 ,  H01L21/76814 ,  H01L21/76826 ,  H01L21/76831

Abstract: A method for repairing process-related damage of a dielectric film includes: (i) adsorbing a first gas containing silicon on a surface of the damaged dielectric film without depositing a film in the absence of reactive species, (ii) adsorbing a second gas containing silicon on a surface of the dielectric film, followed by applying reactive species to the surface of the dielectric film, to form a monolayer film thereon, and (iii) repeating step (ii). The duration of exposing the surface to the first gas in step (i) is longer than the duration of exposing the surface to the second gas in step (ii).

Abstract translation: 一种用于修复电介质膜的工艺相关损伤的方法包括：（i）在不存在反应性物质的情况下，在不沉积膜的情况下，在损坏的电介质膜的表面上吸附含硅的第一气体，（ii）吸附含有 在电介质膜的表面上形成硅，然后在电介质膜的表面上施加反应性物质，以在其上形成单层膜，和（iii）重复步骤（ii）。 在步骤（i）中将表面暴露于第一气体的持续时间比在步骤（ii）中将表面暴露于第二气体的持续时间长。

公开(公告)号：US09478414B2

公开(公告)日：2016-10-25

申请号：US14498036

申请日：2014-09-26

Applicant: ASM IP Holding B.V.

Inventor： Akiko Kobayashi ,  Akinori Nakano ,  Dai Ishikawa ,  Kiyohiro Matsushita

IPC: H01L21/02 ,  H01L21/3105

CPC classification number: H01L21/0228 ,  C23C16/45542 ,  C23C16/56 ,  H01L21/02126 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/0234 ,  H01L21/02359 ,  H01L21/02362 ,  H01L21/3105

Abstract: A method is for hydrophobization of a surface of a silicon-containing film by atomic layer deposition (ALD), wherein the surface is subjected to atmospheric exposure. The method includes: (i) providing a substrate with a silicon-containing film formed thereon; and (ii) forming on a surface of the silicon-containing film a hydrophobic atomic layer as a protective layer subjected to atmospheric exposure, by exposing the surface to a silicon-containing treating gas without exciting the gas. The treating gas is capable of being chemisorbed on the surface to form a hydrophobic atomic layer thereon.

Abstract translation: 一种方法是通过原子层沉积（ALD）使含硅膜的表面疏水化，其中该表面经受大气暴露。 该方法包括：（i）向基板提供其上形成的含硅膜; 和（ii）通过将表面暴露于含硅处理气体而不使气体激发，在作为经受大气暴露的保护层的疏水性原子层的表面上形成含硅膜的表面。 处理气体能够在表面上被化学吸附以在其上形成疏水原子层。

公开(公告)号：US09190263B2

公开(公告)日：2015-11-17

申请号：US13973777

申请日：2013-08-22

Applicant: ASM IP Holding B.V.

Inventor： Dai Ishikawa ,  Kiyohiro Matsushita ,  Akinori Nakano ,  Shintaro Ueda ,  Hirofumi Arai

IPC: H01L21/31 ,  H01L21/469 ,  H01L21/02 ,  H01L21/67

CPC classification number: H01L21/02126 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02323 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/67115 ,  H01L21/67207

Abstract: A method for forming a modified low-k SiOCH film on a substrate, includes: providing a low-k SiOCH film formed on a substrate by flowable CVD; exposing the low-k SiOCH film to a gas containing a Si—N bond in its molecule without applying electromagnetic energy to increase Si—O bonds and/or Si—C bonds in the film; and then curing the low-k SiOCH film.

Abstract translation: 在衬底上形成修饰的低k SiOCH膜的方法包括：通过可流动CVD提供在衬底上形成的低k SiOCH膜; 将低k SiOCH膜暴露于其分子中含有Si-N键的气体，而不施加电磁能以增加膜中的Si-O键和/或Si-C键; 然后固化低k SiOCH膜。

公开(公告)号：US09136108B2

公开(公告)日：2015-09-15

申请号：US14018231

申请日：2013-09-04

Applicant: ASM IP Holding B.V.

Inventor： Kiyohiro Matsushita ,  Hirofumi Arai

IPC: H01L21/00 ,  H01L21/02 ,  H01L21/3105 ,  C23C16/34 ,  C23C16/455

CPC classification number: H01L21/02126 ,  C23C16/345 ,  C23C16/45536 ,  H01L21/02164 ,  H01L21/02222 ,  H01L21/02277 ,  H01L21/0228 ,  H01L21/3105

Abstract: A method for restoring a porous surface of a dielectric layer formed on a substrate, includes: (i) providing in a reaction space a substrate on which a dielectric layer having a porous surface with terminal hydroxyl groups is formed as an outer layer; (ii) supplying gas of a Si—N compound containing a Si—N bond to the reaction space to chemisorb the Si—N compound onto the surface with the terminal hydroxyl groups; (iii) irradiating the Si—N compound-chemisorbed surface with a pulse of UV light in an oxidizing atmosphere to oxidize the surface and provide terminal hydroxyl groups to the surface; and (iv) repeating steps (ii) through (iii) to form a film on the porous surface of the dielectric layer for restoration.

Abstract translation: 一种用于恢复形成在基板上的电介质层的多孔表面的方法，包括：（i）在反应空间中提供其上形成具有末端羟基的多孔表面的电介质层的基板作为外层; （ii）向反应空间供给含有Si-N键的Si-N化合物的气体，以将Si-N化合物化学吸附到具有末端羟基的表面上; （iii）在氧化气氛中用UV光脉冲照射Si-N化合物 - 化学吸附表面以氧化表面并向表面提供端羟基; 和（iv）重复步骤（ii）至（iii）以在电介质层的多孔表面上形成膜以进行还原。

公开(公告)号：US09029272B1

公开(公告)日：2015-05-12

申请号：US14069244

申请日：2013-10-31

Applicant: ASM IP Holding B.V.

Inventor： Akinori Nakano ,  Shintaro Ueda ,  Dai Ishikawa ,  Kiyohiro Matsushita

IPC: H01L21/02

CPC classification number: H01L21/02126 ,  H01L21/02274 ,  H01L21/02277 ,  H01L21/0234 ,  H01L21/02348

Abstract: A method for forming a gap-fill SiOCH film on a patterned substrate includes: (i) providing a substrate having recessed features on its surface; (ii) filling the recessed features of the substrate with a SiOCH film which is flowable and non-porous; (iii) after completion of step (ii), exposing the SiOCH film to a plasma including a hydrogen plasma; and (iv) curing the plasma-exposed SiOCH film with UV light.

Abstract translation: 在图案化衬底上形成间隙填充SiOCH膜的方法包括：（i）提供在其表面上具有凹陷特征的衬底; （ii）用可流动且无孔的SiOCH膜填充基底的凹陷特征; （iii）步骤（ii）完成后，将SiOCH膜暴露于包括氢等离子体的等离子体; 和（iv）用UV光固化等离子体暴露的SiOCH膜。

公开(公告)号：US20150064932A1

公开(公告)日：2015-03-05

申请号：US14018231

申请日：2013-09-04

Applicant: ASM IP Holding B.V.

Inventor： Kiyohiro Matsushita ,  Hirofumi Arai

IPC: H01L21/02

CPC classification number: H01L21/02126 ,  C23C16/345 ,  C23C16/45536 ,  H01L21/02164 ,  H01L21/02222 ,  H01L21/02277 ,  H01L21/0228 ,  H01L21/3105

Abstract: A method for restoring a porous surface of a dielectric layer formed on a substrate, includes: (i) providing in a reaction space a substrate on which a dielectric layer having a porous surface with terminal hydroxyl groups is formed as an outer layer; (ii) supplying gas of a Si—N compound containing a Si—N bond to the reaction space to chemisorb the Si—N compound onto the surface with the terminal hydroxyl groups; (iii) irradiating the Si—N compound-chemisorbed surface with a pulse of UV light in an oxidizing atmosphere to oxidize the surface and provide terminal hydroxyl groups to the surface; and (iv) repeating steps (ii) through (iii) to form a film on the porous surface of the dielectric layer for restoration.

Abstract translation: 一种用于恢复形成在基板上的电介质层的多孔表面的方法，包括：（i）在反应空间中提供其上形成具有末端羟基的多孔表面的电介质层的基板作为外层; （ii）向反应空间供给含有Si-N键的Si-N化合物的气体，以将Si-N化合物化学吸附到具有末端羟基的表面上; （iii）在氧化气氛中用UV光脉冲照射Si-N化合物 - 化学吸附表面以氧化表面并向表面提供端羟基; 和（iv）重复步骤（ii）至（iii）以在电介质层的多孔表面上形成膜以进行还原。

公开(公告)号：US20150056821A1

公开(公告)日：2015-02-26

申请号：US13973777

申请日：2013-08-22

Applicant: ASM IP Holding B.V.

Inventor： Dai Ishikawa ,  Kiyohiro Matsushita ,  Akinori Nakano ,  Shintaro Ueda ,  Hirofumi Arai

IPC: H01L21/02

CPC classification number: H01L21/02126 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/02274 ,  H01L21/02323 ,  H01L21/02337 ,  H01L21/0234 ,  H01L21/02348 ,  H01L21/67115 ,  H01L21/67207

Abstract: A method for forming a modified low-k SiOCH film on a substrate, includes: providing a low-k SiOCH film formed on a substrate by flowable CVD; exposing the low-k SiOCH film to a gas containing a Si—N bond in its molecule without applying electromagnetic energy to increase Si—O bonds and/or Si—C bonds in the film; and then curing the low-k SiOCH film.

Abstract translation: 在衬底上形成修饰的低k SiOCH膜的方法包括：通过可流动CVD提供在衬底上形成的低k SiOCH膜; 将低k SiOCH膜暴露于其分子中含有Si-N键的气体，而不施加电磁能以增加膜中的Si-O键和/或Si-C键; 然后固化低k SiOCH膜。