Invention Grant
- Patent Title: Fin-shaped structure forming process
- Patent Title (中): 翅形结构成型工艺
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Application No.: US13934236Application Date: 2013-07-03
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Publication No.: US09190291B2Publication Date: 2015-11-17
- Inventor: Chia-Jui Liang , Po-Chao Tsao , Jun-Jie Wang , Chih-Sen Huang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Main IPC: H01L21/311
- IPC: H01L21/311

Abstract:
A fin-shaped structure forming process includes the following step. A first mandrel and a second mandrel are formed on a substrate. A first spacer material is formed to entirely cover the first mandrel, the second mandrel and the substrate. The exposed first spacer material is etched to form a first spacer on the substrate beside the first mandrel. A second spacer material is formed to entirely cover the first mandrel, the second mandrel and the substrate. The second spacer material and the first spacer material are etched to form a second spacer on the substrate beside the second mandrel and a third spacer including the first spacer on the substrate beside the first mandrel. The layout of the second spacer and the third spacer is transferred to the substrate, so a second fin-shaped structure and a first fin-shaped structure having different widths are formed respectively.
Public/Granted literature
- US20150011090A1 FIN-SHAPED STRUCTURE FORMING PROCESS Public/Granted day:2015-01-08
Information query
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