Fin-shaped structure forming process

Invention Grant

US09190291B2 Fin-shaped structure forming process 有权

Title translation: 翅形结构成型工艺

Please log in to see more content

Patent Title: Fin-shaped structure forming process
Patent Title (中): 翅形结构成型工艺
Application No.: US13934236

Application Date: 2013-07-03
Publication No.: US09190291B2

Publication Date: 2015-11-17
Inventor: Chia-Jui Liang , Po-Chao Tsao , Jun-Jie Wang , Chih-Sen Huang
Applicant: UNITED MICROELECTRONICS CORP.
Applicant Address: TW Science-Based Industrial Park, Hsin-Chu
Assignee: UNITED MICROELECTRONICS CORP.
Current Assignee: UNITED MICROELECTRONICS CORP.
Current Assignee Address: TW Science-Based Industrial Park, Hsin-Chu
Agent Winston Hsu; Scott Margo
Main IPC: H01L21/311
IPC: H01L21/311

Abstract:

A fin-shaped structure forming process includes the following step. A first mandrel and a second mandrel are formed on a substrate. A first spacer material is formed to entirely cover the first mandrel, the second mandrel and the substrate. The exposed first spacer material is etched to form a first spacer on the substrate beside the first mandrel. A second spacer material is formed to entirely cover the first mandrel, the second mandrel and the substrate. The second spacer material and the first spacer material are etched to form a second spacer on the substrate beside the second mandrel and a third spacer including the first spacer on the substrate beside the first mandrel. The layout of the second spacer and the third spacer is transferred to the substrate, so a second fin-shaped structure and a first fin-shaped structure having different widths are formed respectively.

Abstract(Chinese):

鳍状结构形成工序包括以下工序。第一心轴和第二心轴形成在基底上。形成第一间隔材料以完全覆盖第一心轴，第二心轴和基底。蚀刻暴露的第一间隔物材料以在第一心轴旁边的基底上形成第一间隔物。形成第二间隔材料以完全覆盖第一心轴，第二心轴和基底。蚀刻第二间隔物材料和第一间隔物材料以在第二心轴旁边的基底上形成第二间隔物，以及在第一心轴旁边的包括在基底上的第一间隔物的第三间隔物。第二间隔物和第三间隔物的布局被转移到基底，因此分别形成具有不同宽度的第二鳍状结构和第一鳍状结构。

Public/Granted literature

US20150011090A1 FIN-SHAPED STRUCTURE FORMING PROCESS Public/Granted day:2015-01-08

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3105	......后处理
H01L21/311	.......绝缘层的刻蚀