Invention Grant
US09190320B2 Devices including metal-silicon contacts using indium arsenide films and apparatus and methods
有权
包括使用砷化铟膜的金属 - 硅触点的装置和装置和方法
- Patent Title: Devices including metal-silicon contacts using indium arsenide films and apparatus and methods
- Patent Title (中): 包括使用砷化铟膜的金属 - 硅触点的装置和装置和方法
-
Application No.: US13748910Application Date: 2013-01-24
-
Publication No.: US09190320B2Publication Date: 2015-11-17
- Inventor: Khaled Z. Ahmed , Prabu Gopalraja , Atif Noori , Mei Chang
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: H01L21/44
- IPC: H01L21/44 ; H01L21/768 ; H01L21/67 ; H01L23/482 ; H01L29/772 ; H01L21/285
Abstract:
Described are apparatus and methods for forming films comprise indium and arsenic. In particular, these films may be formed in a configuration of two or more chambers under “load lock” conditions. These films may include additional components as dopants, such as aluminum and/or gallium. Such films can be used in metal/silicon contacts having low contact resistances. Also disclosed are devices including the films comprising indium arsenide.
Public/Granted literature
- US20130200518A1 Devices Including Metal-Silicon Contacts Using Indium Arsenide Films and Apparatus and Methods Public/Granted day:2013-08-08
Information query
IPC分类:
