Invention Grant
- Patent Title: Semiconductor device and method of fabricating the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13949289Application Date: 2013-07-24
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Publication No.: US09190404B2Publication Date: 2015-11-17
- Inventor: Hak-Sun Lee , Myeongcheol Kim , Cheol Kim , Sanghyun Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2012-0084075 20120731
- Main IPC: H01L21/70
- IPC: H01L21/70 ; H01L27/088 ; H01L29/78 ; H01L21/768 ; H01L27/02 ; H01L27/11 ; H01L23/485

Abstract:
Provided are a semiconductor device and a method of fabricating the same. The device may include a transistor on a substrate comprising a gate insulating pattern, a gate electrode and an impurity region, a shared contact plug electrically connected to the gate electrode and the impurity region, and an etch-stop layer between side surfaces of the gate electrode and the shared contact. The shared contact plug may include a first conductive pattern electrically connected to the first impurity region and a second conductive pattern electrically connected to the gate electrode, and a top surface of the first conductive pattern may be higher than a top surface of the gate electrode.
Public/Granted literature
- US20140035048A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2014-02-06
Information query
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