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1.发明公开公开(公告)号：US20230187186A1
公开(公告)日：2023-06-15
申请号：US17893783
申请日：2022-08-23
发明人： Jongchul PARK , Sanghyun Lee
IPC分类号： H01J37/32 , H01L21/311 , H01L21/3213
CPC分类号： H01J37/32715 , H01L21/31116 , H01L21/31144 , H01L21/32139 , H01L21/32136 , H01J37/32642 , H01J2237/3341
摘要： A plasma etching apparatus includes a chuck configured to support a wafer, and a voltage application unit. The voltage application unit includes a first voltage application part configured to apply a first voltage to the wafer on the chuck, and a second voltage application part configured to apply a second voltage to the wafer on the chuck, the second voltage being different from the first voltage.
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公开(公告)号：USD951310S1
公开(公告)日：2022-05-10
申请号：US29727147
申请日：2020-03-09
设计人： Seonju Lee , Cheolwoong Seo , Sanghyun Lee
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公开(公告)号：USD921065S1
公开(公告)日：2021-06-01
申请号：US29724256
申请日：2020-02-13
设计人： Seonju Lee , Cheolwoong Seo , Sanghyun Lee
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公开(公告)号：USD921062S1
公开(公告)日：2021-06-01
申请号：US29724167
申请日：2020-02-13
设计人： Seonju Lee , Cheolwoong Seo , Sanghyun Lee
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公开(公告)号：USD831709S1
公开(公告)日：2018-10-23
申请号：US29638612
申请日：2018-02-28
设计人： Hyunsoo Kim , Selim Yoon , Jaemin Lee , Sangwoon Jeon , Hyunil Lee , Junhyeok Choi , Seokwoo Kim , Hyeongju Seo , Sanghyun Lee , Junkyo Lee , Hwanwoong Choi
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公开(公告)号：US20170033107A1
公开(公告)日：2017-02-02
申请号：US15159978
申请日：2016-05-20
发明人： Byoung Hak HONG , Sungil Park , Toshinori Fukai , Shigenobu Maeda , Sada-aki Masuoka , Sanghyun Lee , Keon Yong Cheon , Hock-Chun Chin
IPC分类号： H01L27/092 , H01L21/265 , H01L21/8234 , H01L21/02 , H01L29/06 , H01L29/78
CPC分类号： H01L27/0924 , H01L21/02532 , H01L21/02636 , H01L21/26513 , H01L21/823412 , H01L21/823437 , H01L21/823807 , H01L21/823821 , H01L21/823828 , H01L27/092 , H01L29/0649 , H01L29/78 , H01L29/7846 , H01L29/7848
摘要： A semiconductor device includes a substrate including at least one metal-oxide-semiconductor field-effect transistor (MOSFET) region defined by a device isolation layer and having an active pattern extending in a first direction on the MOSFET region, a gate electrode intersecting the active pattern on the substrate and extending in a second direction intersecting the first direction, and a first gate separation pattern adjacent to the MOSFET region when viewed from a plan view and dividing the gate electrode into segments spaced apart from each other in the second direction. The first gate separation pattern has a tensile strain when the MOSFET region is a P-channel. MOSFET (PMOSFET) region. The first gate separation pattern has a compressive strain when the MOSFET region is an N-channel MOSFET (NMOSFET) region.
摘要翻译： 半导体器件包括：衬底，其包括由器件隔离层限定的至少一个金属氧化物半导体场效应晶体管（MOSFET）区域，并且具有在MOSFET区域上沿第一方向延伸的有源图案;栅极电极与有源 并且沿与第一方向相交的第二方向延伸，以及从平面图观察与MOSFET区域相邻的第一栅极分离图案，并且将栅电极在第二方向上彼此间隔开。 当MOSFET区域为P沟道时，第一栅极分离图案具有拉伸应变。 MOSFET（PMOSFET）区域。 当MOSFET区域是N沟道MOSFET（NMOSFET）区域时，第一栅极分离图案具有压缩应变。
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公开(公告)号：USD1041234S1
公开(公告)日：2024-09-10
申请号：US29886289
申请日：2023-03-07
设计人： Deoksang Yun , Jaemin Lee , Sanghyun Lee
摘要： FIG. 1 is a front perspective view of an electric range, showing our new design;
FIG. 2 is a front view thereof;
FIG. 3 is a rear view thereof;
FIG. 4 is a left-side view thereof;
FIG. 5 is a right-side view thereof;
FIG. 6 is a top view thereof; and,
FIG. 7 is a bottom view thereof.
The broken lines in the figures depict portions of the electric range that form no part of the claimed design.-
公开(公告)号：US11749734B2
公开(公告)日：2023-09-05
申请号：US18087854
申请日：2022-12-23
发明人： Sanghyun Lee , Sungwoo Kang , Jongchul Park , Youngmook Oh , Jeongyun Lee
IPC分类号： H01L29/78 , H01L29/417 , H01L29/08 , H01L29/66 , H01L21/285 , H01L29/45
CPC分类号： H01L29/41791 , H01L21/28518 , H01L29/0847 , H01L29/45 , H01L29/66545 , H01L29/66795 , H01L29/7851
摘要： An integrated circuit device includes a fin-type active area that extends on a substrate in a first direction, a gate structure that extends on the substrate in a second direction and crosses the fin-type active area, source/drain areas arranged on first and second sides of the gate structure, and a contact structure electrically connected to the source/drain areas. The source/drain areas comprise a plurality of merged source/drain structures. Each source/drain area comprises a plurality of first points respectively located on an upper surface of the source/drain area at a center of each source/drain structure, and each source/drain area comprises at least one second point respectively located on the upper surface of the source/drain area where side surfaces of adjacent source/drain structures merge with one another. A bottom surface of the contact structure is non-uniform and corresponds to the first and second points.
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公开(公告)号：US11297597B2
公开(公告)日：2022-04-05
申请号：US16971045
申请日：2019-02-22
发明人： Sanghyun Lee
摘要： Various embodiments of the present invention relate to an electronic device using a plurality of subscriber identification modules, and a method for providing a communication service therefor. According to various embodiments of the present invention, an electronic device comprises: a first subscriber identification module; a second subscriber identification module; a communication circuit operatively connected to the first subscriber identification module and the second subscriber identification module; and a processor operatively connected to the communication circuit, wherein the processor may monitor a paging cycle for the first subscriber identification module and the second subscriber identification module, determine whether a paging conflict has occurred in which a first paging cycle of the first subscriber identification module and a second paging cycle of the second subscriber identification module overlap for at least a certain interval, and, on the basis of whether the paging conflict has occurred, reselect a cell in response to the subscriber identification module in idle mode of the first subscriber identification module or the second subscriber identification module. Various embodiments are possible.
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公开(公告)号：USD921064S1
公开(公告)日：2021-06-01
申请号：US29724171
申请日：2020-02-13
设计人： Seonju Lee , Cheolwoong Seo , Sanghyun Lee
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