发明授权
US09190549B2 Solar cell made using a barrier layer between p-type and intrinsic layers
有权
在p型和本征层之间使用阻挡层制成的太阳能电池
- 专利标题： Solar cell made using a barrier layer between p-type and intrinsic layers
- 专利标题（中）： 在p型和本征层之间使用阻挡层制成的太阳能电池
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申请号： US13406815申请日： 2012-02-28
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公开(公告)号： US09190549B2公开(公告)日： 2015-11-17
- 发明人: Tze-Chiang Chen , Augustin J. Hong , Chien-Chih Huang , Yu-Wei Huang , Jeehwan Kim , Devendra K. Sadana , Chih-Fu Tseng
- 申请人： Tze-Chiang Chen , Augustin J. Hong , Chien-Chih Huang , Yu-Wei Huang , Jeehwan Kim , Devendra K. Sadana , Chih-Fu Tseng
- 申请人地址： US NY Armonk TW Tainan
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION,BAY ZU PRECISION CO., LTD
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION,BAY ZU PRECISION CO., LTD
- 当前专利权人地址： US NY Armonk TW Tainan
- 代理机构： Tutunjian & Bitetto, P.C.
- 代理商 Louis J. Percello
- 主分类号： H01L31/07
- IPC分类号： H01L31/07 ; H01L31/18 ; H01L31/075 ; H01L31/20
摘要：
A method for forming a photovoltaic device includes depositing a p-type layer on a substrate. A barrier layer is formed on the p-type layer by exposing the p-type layer to an oxidizing agent. An intrinsic layer is formed on the barrier layer, and an n-type layer is formed on the intrinsic layer.
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