-
1.发明申请公开(公告)号：US20130221373A1
公开(公告)日：2013-08-29
申请号：US13406815
申请日：2012-02-28
申请人： Tze-Chiang Chen , Augustin J. Hong , Chien-Chih Huang , Yu-Wei Huang , Jeehwan Kim , Devendra K. Sadana , Chih-Fu Tseng
发明人： Tze-Chiang Chen , Augustin J. Hong , Chien-Chih Huang , Yu-Wei Huang , Jeehwan Kim , Devendra K. Sadana , Chih-Fu Tseng
IPC分类号： H01L31/028 , H01L31/18
CPC分类号： H01L31/075 , H01L31/022466 , H01L31/1804 , H01L31/1884 , H01L31/202 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A method for forming a photovoltaic device includes depositing a p-type layer on a substrate. A barrier layer is formed on the p-type layer by exposing the p-type layer to an oxidizing agent. An intrinsic layer is formed on the barrier layer, and an n-type layer is formed on the intrinsic layer.
摘要翻译： 一种用于形成光伏器件的方法包括在衬底上沉积p型层。 通过将p型层暴露于氧化剂，在p型层上形成阻挡层。 在势垒层上形成本征层，在本征层上形成n型层。
-
2.发明授权公开(公告)号：US09190549B2
公开(公告)日：2015-11-17
申请号：US13406815
申请日：2012-02-28
申请人： Tze-Chiang Chen , Augustin J. Hong , Chien-Chih Huang , Yu-Wei Huang , Jeehwan Kim , Devendra K. Sadana , Chih-Fu Tseng
发明人： Tze-Chiang Chen , Augustin J. Hong , Chien-Chih Huang , Yu-Wei Huang , Jeehwan Kim , Devendra K. Sadana , Chih-Fu Tseng
IPC分类号： H01L31/07 , H01L31/18 , H01L31/075 , H01L31/20
CPC分类号： H01L31/075 , H01L31/022466 , H01L31/1804 , H01L31/1884 , H01L31/202 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： A method for forming a photovoltaic device includes depositing a p-type layer on a substrate. A barrier layer is formed on the p-type layer by exposing the p-type layer to an oxidizing agent. An intrinsic layer is formed on the barrier layer, and an n-type layer is formed on the intrinsic layer.
摘要翻译： 一种用于形成光伏器件的方法包括在衬底上沉积p型层。 通过将p型层暴露于氧化剂，在p型层上形成阻挡层。 在势垒层上形成本征层，在本征层上形成n型层。
-
公开(公告)号：US08628999B2
公开(公告)日：2014-01-14
申请号：US13406838
申请日：2012-02-28
申请人： Augustin J. Hong , Marinus J. Hopstaken , Chien-Chih Huang , Yu-Wei Huang , Jeehwan Kim , Devendra K. Sadana , Chih-Fu Tseng
发明人： Augustin J. Hong , Marinus J. Hopstaken , Chien-Chih Huang , Yu-Wei Huang , Jeehwan Kim , Devendra K. Sadana , Chih-Fu Tseng
IPC分类号： H01L31/00
CPC分类号： H01L31/075 , H01L31/1816 , H01L31/202 , Y02E10/548 , Y02P70/521
摘要： Methods for forming a photovoltaic device include depositing a p-type layer on a substrate and cleaning the p-type layer by exposing a surface of the p-type layer to a plasma treatment to react with contaminants. An intrinsic layer is formed on the p-type layer, and an n-type layer is formed on the intrinsic layer.
摘要翻译： 用于形成光伏器件的方法包括在衬底上沉积p型层并通过将p型层的表面暴露于等离子体处理以与污染物反应来清洁p型层。 在p型层上形成本征层，在本征层上形成n型层。
-
公开(公告)号：US20130224900A1
公开(公告)日：2013-08-29
申请号：US13406838
申请日：2012-02-28
申请人： Augustin J. Hong , Marinus J. Hopstaken , Chien-Chih Huang , Yu-Wei Huang , Jeehwan Kim , Devendra K. Sadana , Chih-Fu Tseng
发明人： Augustin J. Hong , Marinus J. Hopstaken , Chien-Chih Huang , Yu-Wei Huang , Jeehwan Kim , Devendra K. Sadana , Chih-Fu Tseng
IPC分类号： H01L31/0352
CPC分类号： H01L31/075 , H01L31/1816 , H01L31/202 , Y02E10/548 , Y02P70/521
摘要： Methods for forming a photovoltaic device include depositing a p-type layer on a substrate and cleaning the p-type layer by exposing a surface of the p-type layer to a plasma treatment to react with contaminants. An intrinsic layer is formed on the p-type layer, and an n-type layer is formed on the intrinsic layer.
摘要翻译： 用于形成光伏器件的方法包括在衬底上沉积p型层并通过将p型层的表面暴露于等离子体处理以与污染物反应来清洁p型层。 在p型层上形成本征层，在本征层上形成n型层。
-
公开(公告)号：US10319872B2
公开(公告)日：2019-06-11
申请号：US13468292
申请日：2012-05-10
IPC分类号： H01L31/076 , H01L31/077 , C23C16/50 , H01L31/20 , H01L21/02 , C23C16/02 , H01L31/0216 , H01L31/0368 , H01L31/0376 , H01L31/0392 , C23C16/455 , C23C16/515 , H01L31/0224 , H01L31/065 , H01L31/18 , H01L31/056
摘要： A method for forming a photovoltaic device includes providing a substrate. A layer is deposited to form one or more layers of a photovoltaic stack on the substrate. The depositing of the amorphous layer includes performing a high power flash deposition for depositing a first portion of the layer. A low power deposition is performed for depositing a second portion of the layer.
-
公开(公告)号：US20130298971A1
公开(公告)日：2013-11-14
申请号：US13468292
申请日：2012-05-10
IPC分类号： H01L31/02 , H01L31/0376 , C23C16/50 , H01L31/036
CPC分类号： H01L31/077 , C23C16/0272 , C23C16/45523 , C23C16/45557 , C23C16/50 , C23C16/515 , H01L21/02532 , H01L21/0262 , H01L31/02167 , H01L31/022466 , H01L31/022475 , H01L31/022483 , H01L31/03682 , H01L31/03687 , H01L31/03762 , H01L31/03921 , H01L31/056 , H01L31/065 , H01L31/1816 , H01L31/20 , Y02E10/52 , Y02E10/546 , Y02E10/548
摘要： A method for forming a photovoltaic device includes providing a substrate. A layer is deposited to form one or more layers of a photovoltaic stack on the substrate. The depositing of the amorphous layer includes performing a high power flash deposition for depositing a first portion of the layer. A low power deposition is performed for depositing a second portion of the layer.
摘要翻译： 一种形成光伏器件的方法包括提供衬底。 沉积层以在衬底上形成一层或多层光伏堆叠。 非晶层的沉积包括执行大功率闪蒸沉积以沉积该层的第一部分。 执行低功率沉积以沉积该层的第二部分。
-
公开(公告)号：US09331220B2
公开(公告)日：2016-05-03
申请号：US13173097
申请日：2011-06-30
IPC分类号： H01L31/0236 , H01L31/0352 , H01L31/02 , H01L31/075 , H01L31/18 , H01L31/0224
CPC分类号： H01L31/02366 , H01L31/022483 , H01L31/02363 , H01L31/035281 , H01L31/03529 , H01L31/03762 , H01L31/075 , H01L31/077 , H01L31/1804 , H01L31/1888 , Y02E10/50
摘要： A photovoltaic device and method include forming a plurality of pillar structures in a substrate, forming a first electrode layer on the pillar structures and forming a continuous photovoltaic stack including an N-type layer, a P-type layer and an intrinsic layer on the first electrode. A second electrode layer is deposited over the photovoltaic stack such that gaps or fissures occur in the second electrode layer between the pillar structures. The second electrode layer is wet etched to open up the gaps or fissures and reduce the second electrode layer to form a three-dimensional electrode of substantially uniform thickness over the photovoltaic stack.
摘要翻译： 一种光电器件和方法包括在衬底中形成多个柱结构，在柱结构上形成第一电极层，并在第一衬底上形成包括N型层，P型层和本征层的连续光伏堆叠 电极。 第二电极层沉积在光伏堆叠上，使得在柱结构之间的第二电极层中出现间隙或裂缝。 湿蚀刻第二电极层以打开间隙或裂缝并且减小第二电极层以在光伏堆叠上形成基本上均匀厚度的三维电极。
-
公开(公告)号：US09214577B2
公开(公告)日：2015-12-15
申请号：US13407006
申请日：2012-02-28
IPC分类号： H01L31/0224 , H01L31/0232 , H01L31/075 , H01L31/18
CPC分类号： H01L31/03767 , H01L31/022466 , H01L31/075 , H01L31/1804 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： Methods for forming a photovoltaic device include forming a buffer layer between a transparent electrode and a p-type layer. The buffer layer includes a work function that falls substantially in a middle of a barrier formed between the transparent electrode and the p-type layer to provide a greater resistance to light induced degradation. An intrinsic layer and an n-type layer are formed over the p-type layer.
摘要翻译： 形成光伏器件的方法包括在透明电极和p型层之间形成缓冲层。 缓冲层包括基本上落在形成在透明电极和p型层之间的屏障的中间的功函数，以提供对光诱导的降解更大的阻力。 在p型层上形成本征层和n型层。
-
公开(公告)号：US20140000685A1
公开(公告)日：2014-01-02
申请号：US13544415
申请日：2012-07-09
IPC分类号： H01L31/02
CPC分类号： H01L31/022425 , H01L31/03921 , H01L31/075 , H01L31/1864 , Y02E10/548 , Y02P70/521
摘要： A photovoltaic device includes one or more layers of a photovoltaic stack formed on a substrate by employing a high deposition rate plasma enhanced chemical vapor deposition (HDR PECVD) process. Contacts are formed on the photovoltaic stack to provide a photovoltaic cell. Reduced defect zones are disposed adjacent to contact regions in portions of the photovoltaic cell and are formed by an anneal configured to improve overall performance.
摘要翻译： 光伏器件包括通过采用高沉积速率等离子体增强化学气相沉积（HDR PECVD）工艺在衬底上形成的一层或多层光伏叠层。 在光伏堆叠上形成触点以提供光伏电池。 减少的缺陷区设置在光伏电池部分的接触区域附近，并且通过被配置成改善整体性能的退火形成。
-
10.发明申请公开(公告)号：US20130224899A1
公开(公告)日：2013-08-29
申请号：US13406970
申请日：2012-02-28
IPC分类号： H01L31/18
CPC分类号： H01L31/1884 , C23C16/22 , H01L31/02167 , H01L31/075 , H01L31/204 , Y02E10/548
摘要： Methods for forming a photovoltaic device include adjusting a deposition power for depositing a buffer layer including germanium on a transparent electrode. The deposition power is configured to improve device efficiency. A p-type layer is formed on the buffer layer. An intrinsic layer and an n-type layer are formed over the p-type layer.
摘要翻译： 用于形成光伏器件的方法包括调整用于在透明电极上沉积包括锗的缓冲层的沉积功率。 沉积功率被配置为提高器件效率。 在缓冲层上形成p型层。 在p型层上形成本征层和n型层。
-
-
-
-
-
-
-
-
-
搜索结果
371 条记录 (耗时 0.066 秒)
