A flip-chip light emitting diode (LED) includes: a substrate having a P-type pad electrode and an N-type pad electrode; a light-emitting epitaxial layer flip-chip mounted over the substrate, including, from top down, an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. The n-type semiconductor layer is divided into a light-emitting region, an isolation region, and an electrode region. The light-emitting region and the electrode region are electrically isolated by the isolation region. The active layer and the p-type semiconductor layer are below the light-emitting region. The p-type semiconductor layer connects with the P-type pad electrode. The electrode region of the n-type semiconductor layer connects with the N-type pad electrode. A conductive connection portion on the n-type semiconductor layer connects the electrode region of the n-type semiconductor layer and the light-emitting region, realizing vertical current injection into the light-emitting epitaxial layer when an external power is connected.