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    Vertical light emitting device and manufacturing method thereof
    1.
    发明授权
    Vertical light emitting device and manufacturing method thereof 有权
    垂直发光器件及其制造方法

    公开(公告)号：US09159895B2

    公开(公告)日：2015-10-13

    申请号：US14394851

    申请日：2013-03-19

    Applicant: Xiamen Sanan Optoelectronics Technology Co., Ltd.

    Inventor： Xiaoqiang Zeng ,  Shunping Chen ,  Shaohua Huang ,  Qunfeng Pan ,  Jyh-Chiarng Wu

    IPC: H01L33/00 ,  H01L33/62 ,  H01L25/075 ,  H01L33/20 ,  H01L33/44

    CPC classification number: H01L33/62 ,  H01L25/0753 ,  H01L33/20 ,  H01L33/44 ,  H01L2924/0002 ,  H01L2933/0033 ,  H01L2924/00

    Abstract: A vertical high-voltage light emitting device and a manufacturing method thereof. Polarities of two adjacent light emitting diodes (LEDs) are reversed by means of area laser stripping and die bonding, and the two diodes whose polarities are reversed are disposed on an insulating substrate comprising a bonding metal layer (320). A conductive wire (140) is distributed on a surface of the light emitting device, so that a single LED unit (330) has a vertical structure, and multiple LEDs are connected in series to form a high-voltage LED, thereby solving the problems of low light emitting efficiency and large thermal resistance of a horizontal structure.

    Abstract translation: 一种垂直高压发光器件及其制造方法。 两个相邻的发光二极管（LED）的极性通过区域激光剥离和管芯接合而被反转，并且极性反转的两个二极管被布置在包括接合金属层（320）的绝缘基板上。 导电线（140）分布在发光器件的表面上，使得单个LED单元（330）具有垂直结构，并且多个LED串联连接以形成高压LED，从而解决问题 的水平结构的低发光效率和大的热阻。

    Flip-chip light emitting diode and fabrication method
    2.
    发明授权
    Flip-chip light emitting diode and fabrication method 有权
    倒装芯片发光二极管及其制作方法

    公开(公告)号：US09190569B2

    公开(公告)日：2015-11-17

    申请号：US14583185

    申请日：2014-12-25

    Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

    Inventor： Xiaoqiang Zeng ,  Shunping Chen ,  Qunfeng Pan ,  Shaohua Huang

    IPC: H01L29/18 ,  H01L33/20 ,  H01L33/14 ,  H01L33/62 ,  H01L27/15 ,  H01L33/00 ,  H01L33/36 ,  H01L33/38

    CPC classification number: H01L33/20 ,  H01L27/15 ,  H01L33/005 ,  H01L33/145 ,  H01L33/36 ,  H01L33/38 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0016 ,  H01L2924/00

    Abstract: A flip-chip light emitting diode (LED) includes: a substrate having a P-type pad electrode and an N-type pad electrode; a light-emitting epitaxial layer flip-chip mounted over the substrate, including, from top down, an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. The n-type semiconductor layer is divided into a light-emitting region, an isolation region, and an electrode region. The light-emitting region and the electrode region are electrically isolated by the isolation region. The active layer and the p-type semiconductor layer are below the light-emitting region. The p-type semiconductor layer connects with the P-type pad electrode. The electrode region of the n-type semiconductor layer connects with the N-type pad electrode. A conductive connection portion on the n-type semiconductor layer connects the electrode region of the n-type semiconductor layer and the light-emitting region, realizing vertical current injection into the light-emitting epitaxial layer when an external power is connected.

    Abstract translation: 倒装芯片发光二极管（LED）包括：具有P型焊盘电极和N型焊盘电极的基板; 安装在衬底上的发光外延层倒装芯片，包括从上到下的n型半导体层，有源层和p型半导体层。 n型半导体层被分为发光区域，隔离区域和电极区域。 发光区域和电极区域通过隔离区域电隔离。 有源层和p型半导体层位于发光区域的下方。 p型半导体层与P型焊盘电极连接。 n型半导体层的电极区域与N型焊盘电极连接。 n型半导体层上的导体连接部分连接n型半导体层的电极区域和发光区域，当连接外部电源时实现垂直电流注入发光外延层。

    Vertical type AC-LED device and manufacturing method thereof
    5.
    发明授权
    Vertical type AC-LED device and manufacturing method thereof 有权
    立式AC-LED装置及其制造方法

    公开(公告)号：US09537048B2

    公开(公告)日：2017-01-03

    申请号：US14402175

    申请日：2013-03-21

    Applicant: Xiamen Sanan Optoelectronics Technology Co., Ltd.

    Inventor： Shunping Chen ,  Xiaoqiang Zeng ,  Shaohua Huang ,  Qunfeng Pan ,  Jyh-Chiarng Wu

    IPC: H01L33/08 ,  H01L27/15 ,  H01L25/075 ,  H01L33/00 ,  H01L33/38 ,  H01L33/44 ,  H01L33/62

    CPC classification number: H01L33/08 ,  H01L25/0753 ,  H01L27/15 ,  H01L33/0079 ,  H01L33/382 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0066 ,  H01L2924/00

    Abstract: The present invention discloses a vertical AC LED element and fabrication method thereof, wherein the vertical AC LED element comprises a conductive substrate (102); a light-emitting module on the conductive substrate (102), including two horizontally arranged in parallel and mutually-isolated LEDs; wherein the first and second LEDs include a first semiconductor layer (111), a light-emitting layer (112) and a second semiconductor layer (113) from top down; a first insulating layer (131) is arranged between the second semiconductor layer (113) of the first LED and the conductive substrate (102) for mutual isolation; an ohmic contact is formed between the second semiconductor layer (113) of the second LED and the conductive substrate (102); a first conductive structure that connects the first semiconductor layer (111) of the first LED, the second semiconductor layer (113) of the second LED and the conductive substrate (102); and a second conductive structure that connects the second semiconductor layer (113) of the first LED and the first semiconductor layer (111) of the second LED.

    Abstract translation: 本发明公开了一种垂直AC LED元件及其制造方法，其中垂直AC LED元件包括导电衬底（102）; 导电基板（102）上的发光模块，包括两个水平布置的并联和相互隔离的LED; 其中所述第一和第二LED包括从上到下的第一半导体层（111），发光层（112）和第二半导体层（113） 第一绝缘层（131）布置在第一LED的第二半导体层（113）和导电基板（102）之间以进行相互隔离; 在第二LED的第二半导体层（113）和导电基板（102）之间形成欧姆接触; 连接第一LED的第一半导体层（111），第二LED的第二半导体层（113）和导电基板（102）的第一导电结构; 以及连接第一LED的第二半导体层（113）和第二LED的第一半导体层（111）的第二导电结构。

    Vertical Type AC-LED Device and Manufacturing Method Thereof
    6.
    发明申请
    Vertical Type AC-LED Device and Manufacturing Method Thereof 有权
    立式AC-LED装置及其制造方法

    公开(公告)号：US20150144974A1

    公开(公告)日：2015-05-28

    申请号：US14402175

    申请日：2013-03-21

    Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.

    Inventor： Shunping Chen ,  Xiaoqiang Zeng ,  Shaohua Huang ,  Qunfeng Pan ,  Jyh-Chiarng Wu

    IPC: H01L33/08 ,  H01L33/62

    CPC classification number: H01L33/08 ,  H01L25/0753 ,  H01L27/15 ,  H01L33/0079 ,  H01L33/382 ,  H01L33/44 ,  H01L33/62 ,  H01L2924/0002 ,  H01L2933/0066 ,  H01L2924/00

    Abstract: The present invention discloses a vertical AC LED element and fabrication method thereof, wherein the vertical AC LED element comprises a conductive substrate (102); a light-emitting module on the conductive substrate (102), including two horizontally arranged in parallel and mutually-isolated LEDs; wherein the first and second LEDs include a first semiconductor layer (111), a light-emitting layer (112) and a second semiconductor layer (113) from top down; a first insulating layer (131) is arranged between the second semiconductor layer (113) of the first LED and the conductive substrate (102) for mutual isolation; an ohmic contact is formed between the second semiconductor layer (113) of the second LED and the conductive substrate (102); a first conductive structure that connects the first semiconductor layer (111) of the first LED, the second semiconductor layer (113) of the second LED and the conductive substrate (102); and a second conductive structure that connects the second semiconductor layer (113) of the first LED and the first semiconductor layer (111) of the second LED.

    Abstract translation: 本发明公开了一种垂直AC LED元件及其制造方法，其中垂直AC LED元件包括导电衬底（102）; 导电基板（102）上的发光模块，包括两个水平布置的并联和相互隔离的LED; 其中所述第一和第二LED包括从上到下的第一半导体层（111），发光层（112）和第二半导体层（113） 第一绝缘层（131）布置在第一LED的第二半导体层（113）和导电基板（102）之间以进行相互隔离; 在第二LED的第二半导体层（113）和导电基板（102）之间形成欧姆接触; 连接第一LED的第一半导体层（111），第二LED的第二半导体层（113）和导电基板（102）的第一导电结构; 以及连接第一LED的第二半导体层（113）和第二LED的第一半导体层（111）的第二导电结构。

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