Invention Grant
US09191597B2 Pinned photodiode CMOS image sensor with a low supply voltage
有权
固定光电二极管CMOS图像传感器具有低电源电压
- Patent Title: Pinned photodiode CMOS image sensor with a low supply voltage
- Patent Title (中): 固定光电二极管CMOS图像传感器具有低电源电压
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Application No.: US13605685Application Date: 2012-09-06
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Publication No.: US09191597B2Publication Date: 2015-11-17
- Inventor: Frédéric Barbier , Yvon Cazaux
- Applicant: Frédéric Barbier , Yvon Cazaux
- Applicant Address: FR Montrouge
- Assignee: STMicroelectronics S.A.
- Current Assignee: STMicroelectronics S.A.
- Current Assignee Address: FR Montrouge
- Agency: Seed IP Law Group PLLC
- Priority: FR0655830 20061221
- Main IPC: H04N3/14
- IPC: H04N3/14 ; H04N5/3745 ; H04N5/359

Abstract:
A device for controlling an image sensor including at least one photosensitive cell including a photodiode capable of discharging into a sense node via a first MOS transistor, the sense node being connected to the gate of a second MOS transistor having its source connected to a processing system. The device includes a bias circuit capable of increasing the voltage of the source during the discharge of the photodiode into the sense node.
Public/Granted literature
- US20130009041A1 PINNED PHOTODIODE CMOS IMAGE SENSOR WITH A LOW SUPPLY VOLTAGE Public/Granted day:2013-01-10
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