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    PINNED PHOTODIODE CMOS IMAGE SENSOR WITH A LOW SUPPLY VOLTAGE
    1.
    发明申请
    PINNED PHOTODIODE CMOS IMAGE SENSOR WITH A LOW SUPPLY VOLTAGE 有权
    带低电压的PINNED光电CMOS图像传感器

    公开(公告)号：US20130009041A1

    公开(公告)日：2013-01-10

    申请号：US13605685

    申请日：2012-09-06

    Applicant: Frédéric Barbier ,  Yvon Cazaux

    Inventor： Frédéric Barbier ,  Yvon Cazaux

    IPC: H01L27/146

    CPC classification number: H04N5/3745 ,  H04N5/3597

    Abstract: A device for controlling an image sensor including at least one photosensitive cell including a photodiode capable of discharging into a sense node via a first MOS transistor, the sense node being connected to the gate of a second MOS transistor having its source connected to a processing system. The device includes a bias circuit capable of increasing the voltage of the source during the discharge of the photodiode into the sense node.

    Abstract translation: 一种用于控制图像传感器的装置，包括至少一个感光单元，该感光单元包括经由第一MOS晶体管能够放电到感测节点的光电二极管，所述感测节点连接到其源极连接到处理系统的第二MOS晶体管的栅极 。 该器件包括偏置电路，其能够在将光电二极管放电到感测节点期间增加源极的电压。

    Pinned photodiode CMOS image sensor with a low supply voltage
    2.
    发明授权
    Pinned photodiode CMOS image sensor with a low supply voltage 有权
    固定光电二极管CMOS图像传感器具有低电源电压

    公开(公告)号：US09191597B2

    公开(公告)日：2015-11-17

    申请号：US13605685

    申请日：2012-09-06

    Applicant: Frédéric Barbier ,  Yvon Cazaux

    Inventor： Frédéric Barbier ,  Yvon Cazaux

    IPC: H04N3/14 ,  H04N5/3745 ,  H04N5/359

    CPC classification number: H04N5/3745 ,  H04N5/3597

    Abstract: A device for controlling an image sensor including at least one photosensitive cell including a photodiode capable of discharging into a sense node via a first MOS transistor, the sense node being connected to the gate of a second MOS transistor having its source connected to a processing system. The device includes a bias circuit capable of increasing the voltage of the source during the discharge of the photodiode into the sense node.

    Abstract translation: 一种用于控制图像传感器的装置，包括至少一个感光单元，该感光单元包括经由第一MOS晶体管能够放电到感测节点的光电二极管，所述感测节点连接到其源极连接到处理系统的第二MOS晶体管的栅极 。 该器件包括偏置电路，其能够在将光电二极管放电到感测节点期间增加源极的电压。

    Pixel circuit for global electronic shutter
    3.
    发明授权
    Pixel circuit for global electronic shutter 有权
    全球电子快门的像素电路

    公开(公告)号：US08153947B2

    公开(公告)日：2012-04-10

    申请号：US12350677

    申请日：2009-01-08

    Applicant: Frédéric Barbier ,  Yvon Cazaux

    Inventor： Frédéric Barbier ,  Yvon Cazaux

    IPC: H01L27/00

    CPC classification number: H04N5/3559 ,  H01L27/14609 ,  H01L27/14623 ,  H01L27/14641 ,  H04N5/359 ,  H04N5/361 ,  H04N5/37452

    Abstract: An image sensor formed of an array of pixels, each pixel including a photodiode coupled between a first reference voltage and a first switch, the first switch being operable to connect the photodiode to a first node; a capacitor arranged to store a charge accumulated by the photodiode, the capacitor being coupled between a second reference voltage and a second node; a second switch coupled between the first and second nodes, the second switch being operable to connect the capacitor to the first node; and read circuitry coupled for reading the voltage at the second node.

    Abstract translation: 由像素阵列形成的图像传感器，每个像素包括耦合在第一参考电压和第一开关之间的光电二极管，所述第一开关可操作以将光电二极管连接到第一节点; 电容器，被布置成存储由所述光电二极管累积的电荷，所述电容器耦合在第二参考电压和第二节点之间; 耦合在所述第一和第二节点之间的第二开关，所述第二开关可操作以将所述电容器连接到所述第一节点; 并读取电路，用于读取第二节点处的电压。

    Pinned photodiode CMOS image sensor with a low supply voltage
    4.
    发明授权
    Pinned photodiode CMOS image sensor with a low supply voltage 有权
    固定光电二极管CMOS图像传感器具有低电源电压

    公开(公告)号：US08284280B2

    公开(公告)日：2012-10-09

    申请号：US11959023

    申请日：2007-12-18

    Applicant: Frédéric Barbier ,  Yvon Cazaux

    Inventor： Frédéric Barbier ,  Yvon Cazaux

    IPC: H04N3/14

    CPC classification number: H04N5/3745 ,  H04N5/3597

    Abstract: A device for controlling an image sensor including at least one photosensitive cell including a photodiode capable of discharging into a sense node via a first MOS transistor, the sense node being connected to the gate of a second MOS transistor having its source connected to a processing system. The device includes a bias circuit capable of increasing the voltage of the source during the discharge of the photodiode into the sense node.

    Abstract translation: 一种用于控制图像传感器的装置，包括至少一个感光单元，该感光单元包括经由第一MOS晶体管能够放电到感测节点的光电二极管，所述感测节点连接到其源极连接到处理系统的第二MOS晶体管的栅极 。 该器件包括偏置电路，其能够在将光电二极管放电到感测节点期间增加源极的电压。

    Image sensor with vertical transfer gate
    6.
    发明授权
    Image sensor with vertical transfer gate 有权
    具有垂直传输门的图像传感器

    公开(公告)号：US08531567B2

    公开(公告)日：2013-09-10

    申请号：US12910176

    申请日：2010-10-22

    Applicant: François Roy ,  Frédéric Barbier

    Inventor： François Roy ,  Frédéric Barbier

    IPC: H04N3/14 ,  H04N5/335

    CPC classification number: H01L27/14603 ,  H01L27/14612 ,  H01L27/1463 ,  H01L27/14641 ,  H01L27/14683

    Abstract: An image sensor including a first pixel positioned between second and third pixels, each of the first, second and third pixels comprising a photodiode region surrounded by an isolation trench; a first charge transfer gate comprising a first column electrode surrounded by an insulating layer and positioned in an opening of the isolation trench between the first and second pixels, the first column electrode being configured to receive a first transfer voltage signal; and a second charge transfer gate including a second column electrode surrounded by an insulating layer and positioned in an opening of the isolation trench between the first and third pixels, the second column electrode being configured to receive a second transfer voltage signal.

    Abstract translation: 一种图像传感器，包括位于第二和第三像素之间的第一像素，第一，第二和第三像素中的每一个包括由隔离沟槽包围的光电二极管区域; 第一电荷传输门，包括由绝缘层包围并位于第一和第二像素之间的隔离沟槽的开口中的第一列电极，第一列电极被配置为接收第一转印电压信号; 以及第二电荷转移栅极，包括由绝缘层包围并位于第一和第三像素之间的隔离沟槽的开口中的第二列电极，第二列电极被配置为接收第二转印电压信号。

    Image sensor pixel circuit
    7.
    发明授权
    Image sensor pixel circuit 有权
    图像传感器像素电路

    公开(公告)号：US08853755B2

    公开(公告)日：2014-10-07

    申请号：US12889537

    申请日：2010-09-24

    Applicant: Frédéric Barbier ,  François Roy

    Inventor： Frédéric Barbier ,  François Roy

    IPC: H01L31/113 ,  H04N5/365 ,  H01L27/146 ,  H04N5/378 ,  H04N5/3745

    CPC classification number: H04N5/378 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14683 ,  H04N5/365 ,  H04N5/3745

    Abstract: A pixel circuit of an image sensor includes a sense node for storing a charge transferred from one or more photodiodes, a source follower transistor having its gate coupled to the sense node and its source node coupled to an output line of the pixel circuit via a read transistor, wherein a body contact of the source follower transistor is connected to the output line.

    Abstract translation: 图像传感器的像素电路包括用于存储从一个或多个光电二极管传送的电荷的感测节点，源极跟随器晶体管，其栅极耦合到感测节点，其源极节点通过读取耦合到像素电路的输出线 晶体管，其中源极跟随器晶体管的体接触连接到输出线。

    Silk-Screen Stencil for Printing onto a Photovoltaic Cell
    10.
    发明申请
    Silk-Screen Stencil for Printing onto a Photovoltaic Cell 有权
    用于印刷到光伏电池上的丝印模板

    公开(公告)号：US20140127854A1

    公开(公告)日：2014-05-08

    申请号：US14008663

    申请日：2012-02-03

    Applicant: Armand Bettinelli ,  Frédéric Barbier

    Inventor： Armand Bettinelli ,  Frédéric Barbier

    IPC: B41F15/34 ,  H01L31/18

    CPC classification number: B41F15/34 ,  B41F15/0881 ,  B41F15/36 ,  B41N1/247 ,  B41N1/248 ,  B41P2215/50 ,  H01L31/022425 ,  H01L31/18 ,  H05K3/1225 ,  Y02E10/50

    Abstract: Stencil for a screen-printing system, comprising slits (22, 23) in a central printing zone (13), forming a pattern to be printed, characterized in that it comprises one or more apertures (32) in a peripheral deforming zone (14), which apertures are intended to cause this peripheral deforming zone (14) to deform under the effect of a stress applied to the stencil while reducing deformation of the central printing one (13).

    Abstract translation: 一种用于丝网印刷系统的模板，包括在中央印刷区域（13）中的狭缝（22,23），形成待印刷的图案，其特征在于，其包括在周边变形区域（14）中的一个或多个孔（32） ），这些孔旨在使该外围变形区（14）在施加到模板上的应力的作用下变形，同时减少中心印刷的变形（13）。

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