Invention Grant
- Patent Title: Integrated circuit with on die termination and reference voltage generation and methods of using the same
- Patent Title (中): 具有管芯端接和参考电压产生的集成电路及其使用方法
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Application No.: US14248447Application Date: 2014-04-09
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Publication No.: US09196325B2Publication Date: 2015-11-24
- Inventor: Yoon-Joo Eom , Byongmo Moon , Yongcheol Bae
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2013-0085526 20130719
- Main IPC: G11C7/10
- IPC: G11C7/10 ; H03K19/00 ; G11C7/22 ; G11C11/4076 ; G11C11/4093
Abstract:
An integrated circuit includes a data input such as a data pad for receiving an external data signal input and an on-die termination (ODT) information input for receiving ODT information from an external device. An ODT circuit selectively couples a termination resistor to the data pad based on the ODT information. An input buffer is coupled to the data pad for determining data that is input into the pad using a reference voltage. A reference voltage generator is coupled to the input buffer and generates the reference voltage on the basis of the ODT information.
Public/Granted literature
- US20150023112A1 INTEGRATED CIRCUIT AND DATA INPUT METHOD Public/Granted day:2015-01-22
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