Invention Grant
- Patent Title: Resistance-based memory cells with multiple source lines
- Patent Title (中): 具有多个源极线的基于电阻的存储单元
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Application No.: US14041868Application Date: 2013-09-30
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Publication No.: US09196339B2Publication Date: 2015-11-24
- Inventor: Xiangyu Dong
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Toler Law Group, PC
- Main IPC: G11C11/16
- IPC: G11C11/16 ; G11C7/10 ; G11C8/16 ; G11C11/00 ; G11C11/56 ; G11C13/00 ; G11C17/02 ; G11C17/14
Abstract:
In a particular embodiment, a device includes a resistance-based memory cell having multiple source lines and multiple access transistors. A coupling configuration of the multiple access transistors to multiple source lines encodes a data value.
Public/Granted literature
- US20150092479A1 RESISTANCE-BASED MEMORY CELLS WITH MULTIPLE SOURCE LINES Public/Granted day:2015-04-02
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