Invention Grant
- Patent Title: Voltage stabilizing for a memory cell array
- Patent Title (中): 用于存储单元阵列的电压稳定
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Application No.: US14137189Application Date: 2013-12-20
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Publication No.: US09196357B2Publication Date: 2015-11-24
- Inventor: Karthik Sarpatwari , Hongmei Wang , Rangan Sanjay
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Brooks, Cameron & Huebsch, PLLC
- Main IPC: G11C7/10
- IPC: G11C7/10 ; G11C13/00 ; G11C7/02 ; G11C8/08 ; G11C7/12

Abstract:
Voltage balancing for a memory cell array is provided. One example method of voltage balancing for a memory array can include activating an access node coupled to a row of a memory array to provide voltage to the row of the memory array, activating a stabilizing transistor coupled to the row of the memory array to create a feedback loop, and activating a driving node coupled to a column of the memory array, wherein activating the driving node deactivates the stabilizing transistor once the column reaches a particular voltage potential.
Public/Granted literature
- US20150179255A1 VOLTAGE STABILIZING FOR A MEMORY CELL ARRAY Public/Granted day:2015-06-25
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