发明授权
- 专利标题： Methods for fabricating integrated circuits including fluorine incorporation
- 专利标题（中）： 包括氟掺入的集成电路的制造方法
-
申请号： US14253906申请日： 2014-04-16
-
公开(公告)号： US09196475B2公开(公告)日： 2015-11-24
- 发明人: Bongki Lee , Paul Besser , Kevin Kashefi , Olov Karlsson , Ashish Bodke , Ratsamee Limdulpaiboon , Divya Pisharoty , Nobi Fuchigami
- 申请人： GLOBALFOUNDRIES, Inc. , Intermolecular, Inc.
- 申请人地址： KY Grand Cayman US CA San Jose
- 专利权人： GLOBALFOUNDRIES, INC.,INTERMOLECULAR, INC.
- 当前专利权人： GLOBALFOUNDRIES, INC.,INTERMOLECULAR, INC.
- 当前专利权人地址： KY Grand Cayman US CA San Jose
- 代理机构： Ingrassia Fisher & Lorenz, P.C.
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L21/02 ; H01L21/28 ; H01L29/51
摘要：
Integrated circuits and methods for fabricating integrated circuits are provided. In one example, a method for fabricating an integrated circuit includes forming an interlayer of dielectric oxide material in a FET region and overlying a semiconductor substrate. A high-K dielectric layer is deposited overlying the interlayer. Fluorine is incorporated into the interlayer and/or the high-K dielectric layer.
公开/授权文献
信息查询
IPC分类:
