Invention Grant
- Patent Title: Ion control for a plasma source
- Patent Title (中): 等离子体源的离子控制
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Application No.: US13932632Application Date: 2013-07-01
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Publication No.: US09198274B2Publication Date: 2015-11-24
- Inventor: Patrick Lawrence Morse
- Applicant: Sputtering Components, Inc.
- Applicant Address: US MN Owatonna
- Assignee: Sputtering Components, Inc.
- Current Assignee: Sputtering Components, Inc.
- Current Assignee Address: US MN Owatonna
- Agency: Fogg & Powers LLC
- Main IPC: H05H1/24
- IPC: H05H1/24 ; C23C16/48 ; H01J37/32 ; C23C16/515 ; H05H1/46

Abstract:
One embodiment is directed to a plasma source comprising a cavity and at least first and second electrodes. The plasma source is configured to, during a first portion of each cycle, bias the first electrode as a cathode and use the second electrode as an anode, during a second portion of each cycle, apply an ion flush bias to the first and second electrodes, during a third portion of each cycle, bias the second electrode as a cathode and use the first electrode as an anode, and during a fourth portion of each cycle, apply an ion flush bias to the first and second electrodes. Other embodiments are disclosed.
Public/Granted literature
- US20140007813A1 ION CONTROL FOR A PLASMA SOURCE Public/Granted day:2014-01-09
Information query
IPC分类: