Invention Grant
US09202576B2 Non-volatile memory device and programming method using fewer verification voltages than programmable data states
有权
非易失性存储器件和使用比可编程数据状态更少的验证电压的编程方法
- Patent Title: Non-volatile memory device and programming method using fewer verification voltages than programmable data states
- Patent Title (中): 非易失性存储器件和使用比可编程数据状态更少的验证电压的编程方法
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Application No.: US14211077Application Date: 2014-03-14
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Publication No.: US09202576B2Publication Date: 2015-12-01
- Inventor: Yoav Shereshevski , Avner Dor , Shmuel Dashevsky , Jun Jin Kong , Pil Sang Yoon
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2013-0028265 20130315
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/10 ; G11C11/56 ; G11C16/34

Abstract:
A method of programming a non-volatile memory device includes; defining a set of verification voltages, setting a maximum verification voltage among verification voltages that are less than or equal to a first target programming voltage to be a target verification voltage, calculating a number of extra pulses based on the target verification voltage and the first target programming voltage, verifying whether a threshold voltage of the memory cell is equal to or greater than the target verification voltage by applying an incremental step pulse program (ISPP) pulse to the memory cell and then applying at least one verification voltage in the set of verification voltages to the memory cell, and further applying the ISPP pulse to the memory cell a number of times equal to the number of extra pulses when the threshold voltage is verified to be equal to or greater than the target verification voltage.
Public/Granted literature
- US20140269057A1 NON-VOLATILE MEMORY DEVICE AND PROGRAMMING METHOD Public/Granted day:2014-09-18
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