发明授权
- 专利标题： Fully integrated and encapsulated micro-fabricated vacuum diode and method of manufacturing same
- 专利标题（中）： 完全集成和封装的微制造真空二极管及其制造方法
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申请号： US14340012申请日： 2014-07-24
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公开(公告)号： US09202657B1公开(公告)日： 2015-12-01
- 发明人: Paul J. Resnick , Eric Langlois
- 申请人： Sandia Corporation
- 申请人地址： US NM Albuquerque
- 专利权人： Sandia Corporation
- 当前专利权人： Sandia Corporation
- 当前专利权人地址： US NM Albuquerque
- 代理商 Helen S. Baca
- 主分类号： H01J9/04
- IPC分类号： H01J9/04 ; H01J3/02 ; H01J1/308 ; H01J1/304
摘要：
Disclosed is an encapsulated micro-diode and a method for producing same. The method comprises forming a plurality columns in the substrate with a respective tip disposed at a first end of the column, the tip defining a cathode of the diode; disposing a sacrificial oxide layer on the substrate, plurality of columns and respective tips; forming respective trenches in the sacrificial oxide layer around the columns; forming an opening in the sacrificial oxide layer to expose a portion of the tips; depositing a conductive material in of the opening and on a surface of the substrate to form an anode of the diode; and removing the sacrificial oxide layer.
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