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公开(公告)号：US11664182B2
公开(公告)日：2023-05-30
申请号：US17401823
申请日：2021-08-13
发明人： Shigeya Kimura , Hisashi Yoshida , Hisao Miyazaki , Hiroshi Tomita , Souichi Ueno , Takeshi Hoshi
摘要： According to one embodiment, an electron emitting element includes a first region, a second region, and a third region. The first region includes a semiconductor including a first element of an n-type impurity. The second region includes diamond. The diamond includes a second element including at least one selected from the group consisting of nitrogen, phosphorous, arsenic, antimony, and bismuth. The third region is provided between the first region and the second region. The third region includes Alx1Ga1-x1N (0
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公开(公告)号：US20200027683A1
公开(公告)日：2020-01-23
申请号：US16495784
申请日：2018-02-28
发明人： Gareth Andrew Taylor
IPC分类号： H01J1/308 , H01J1/304 , H01J9/02 , H01L29/16 , H01L29/06 , H01L29/861 , H01L29/66 , H01L21/04
摘要： An electrical device comprising a substrate of diamond material and elongate metal protrusions extending into respective recesses in the substrate. Doped semiconductor layers, arranged between respective protrusions and the substrate, behave as n type semiconducting material on application of an electric field, between the protrusions and the substrate, suitable to cause a regions of positive space charge within the semiconductor layers.
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3.发明申请公开(公告)号：US20190080870A1
公开(公告)日：2019-03-14
申请号：US16127670
申请日：2018-09-11
发明人： KENICHIRO NAKAMATSU , HIDEKAZU HAYASHI , TOKIO TAGUCHI , TADASHI IWAMATSU , KOHJI SHINKAWA , MAI TAKASAKI , TOSHIHIRO KANEKO , ATSUSHI NIINOH
摘要： Provided are an electron emission device having a novel structure and being capable of improving characteristics and/or extending a lifetime of a related-art electron emission device, and a method of manufacturing the electron emission device. The method of manufacturing an electron emission device includes: a step A of providing one of an aluminum substrate and an aluminum layer supported by a substrate; a step B of anodizing a surface of the one of the aluminum, substrate and the aluminum layer to form a porous alumina layer having a plurality of pores; a step C of applying silver nanoparticles into the plurality of pores to cause the plurality of pores to support the silver nanoparticles; a step D of applying, after the step C, an insulating layer forming solution to substantially an entire surface of the one of the aluminum substrate and the aluminum layer; a step E of forming, after the step D, an insulating layer by at least reducing a solvent included in the insulating layer forming solution; and a step F of forming an electrode on the insulating layer.
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公开(公告)号：US09953796B2
公开(公告)日：2018-04-24
申请号：US15098108
申请日：2016-04-13
发明人： Biqin Huang , Christopher S. Roper , Tahir Hussain
摘要： A semiconductor power handling device, includes a cathode pillar, a gate surrounding the cathode pillar, and an anode spaced from the cathode by a nano-vacuum gap. An array of semiconductor power handling devices, each comprising a cathode pillar, a gate surrounding the cathode pillar, and an anode spaced from the cathode pillar by a nano-vacuum gap. The semiconductor power handling devices can be arranged as rows and columns and can be interconnected to meet the requirements of various applications. The array of power handling devices can be fabricated on a single substrate.
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公开(公告)号：US20170117112A1
公开(公告)日：2017-04-27
申请号：US15398537
申请日：2017-01-04
申请人： Elwha LLC
发明人： Max N. Mankin , Tony S. Pan
CPC分类号： H01J9/025 , H01J1/3044 , H01J1/308 , H01J2201/30411 , H01J2201/30469 , H01J2201/30492 , H01J2209/0223 , H01J2237/06341 , H01L21/3065 , H01L31/0352
摘要： Some embodiments of vacuum electronics call for nanoscale field-enhancing geometries. Methods and apparatus for using nanoparticles to fabricate nanoscale field-enhancing geometries are described herein. Other embodiments of vacuum electronics call for methods of controlling spacing between a control grid and an electrode on a nano- or micron-scale, and such methods are described herein.
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6.发明授权Nanoparticle-templated lithographic patterning of nanoscale electronic components 有权纳米尺度电子元件的纳米颗粒模板平版印刷图案公开(公告)号：US09548180B2
公开(公告)日：2017-01-17
申请号：US14947773
申请日：2015-11-20
申请人： Elwha LLC
发明人： Max N. Mankin , Tony S. Pan
IPC分类号： H01J1/308 , H01J9/02 , H01J1/304 , H01L31/0352 , H01L21/3065
CPC分类号： H01J9/025 , H01J1/3044 , H01J1/308 , H01J2201/30411 , H01J2201/30469 , H01J2201/30492 , H01J2209/0223 , H01J2237/06341 , H01L21/3065 , H01L31/0352
摘要： Some embodiments of vacuum electronics call for nanoscale field-enhancing geometries. Methods and apparatus for using nanoparticles to fabricate nanoscale field-enhancing geometries are described herein. Other embodiments of vacuum electronics call for methods of controlling spacing between a control grid and an electrode on a nano- or micron-scale, and such methods are described herein.
摘要翻译： 真空电子设备的一些实施例需要纳米尺度场增强几何形状。 本文描述了使用纳米颗粒制造纳米尺度场增强几何形状的方法和装置。 真空电子设备的其他实施例要求在纳米级或微米尺度上控制控制栅极和电极之间的间隔的方法，并且这里描述了这种方法。
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公开(公告)号：US09536696B1
公开(公告)日：2017-01-03
申请号：US15013699
申请日：2016-02-02
申请人： Elwha LLC
CPC分类号： H01J19/24 , H01J1/304 , H01J1/3046 , H01J1/308 , H01J9/025 , H01J9/18 , H01J2209/0223
摘要： A horizontal multilayer junction-edge field emitter includes a plurality of vertically-stacked multilayer structures separated by isolation layers. Each multilayer structure is configured to produce a 2-dimensional electron gas at a junction between two layers within the structure. The emitter also includes an exposed surface intersecting the 2-dimensional electron gas of each of the plurality of vertically-stacked multilayer structures to form a plurality of effectively one-dimensional horizontal line sources of electron emission.
摘要翻译： 水平多层结边缘场发射器包括由隔离层隔开的多个垂直堆叠的多层结构。 每个多层结构被配置为在结构内的两层之间的接合处产生二维电子气。 发射器还包括与多个垂直层叠的多层结构中的每一个的二维电子气相交的暴露表面，以形成多个有效的一维水平线电子发射源。
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公开(公告)号：US09396901B2
公开(公告)日：2016-07-19
申请号：US14474213
申请日：2014-09-01
发明人： Donggu Lee , Shanghyeun Park , Yongchul Kim , Ilhwan Kim , Taewon Jeong
CPC分类号： H01J9/025 , H01J1/3046 , H01J2201/30423 , H01J2201/30461
摘要： A field emission device may comprise: an emitter comprising a cathode electrode and an electron emission source supported by the cathode electrode; an insulating spacer around the emitter, the insulating spacer forming an opening that is a path of electrons emitted from the electron emission source; and/or a gate electrode around the opening. The electron emission source may comprise a plurality of graphene thin films vertically supported in the cathode electrode toward the opening.
摘要翻译： 场发射器件可以包括：发射器，包括阴极电极和由阴极电极支撑的电子发射源; 围绕发射极的绝缘间隔物，绝缘间隔物形成作为从电子发射源发射的电子的路径的开口; 和/或围绕开口的栅电极。 电子发射源可以包括在阴极中朝向开口垂直支撑的多个石墨烯薄膜。
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公开(公告)号：US09390878B2
公开(公告)日：2016-07-12
申请号：US14599986
申请日：2015-01-19
发明人： Peng Liu , De-Jie Li , Chun-Hai Zhang , Duan-Liang Zhou , Bing-Chu Du , Shou-Shan Fan
CPC分类号： H01J1/308 , H01J1/312 , H01J2201/30461 , H01J2201/30469 , H01J2201/3125 , H01J2329/0449 , H01J2329/0455 , H01J2329/0478 , H01J2329/0484 , Y10S977/939
摘要： An electron emission source includes a first electrode, a semiconductor layer, an insulating layer, and a second electrode stacked in that sequence, wherein an electron collection layer is sandwiched between the semiconductor layer and the insulating layer, the electron collection layer is in contact with the semiconductor layer and the insulating layer, and the electron collection layer is a conductive layer to collect electrons.
摘要翻译： 电子发射源包括以该顺序堆叠的第一电极，半导体层，绝缘层和第二电极，其中电子收集层夹在半导体层和绝缘层之间，电子收集层与 半导体层和绝缘层，并且电子收集层是用于收集电子的导电层。
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公开(公告)号：US08981338B2
公开(公告)日：2015-03-17
申请号：US13849139
申请日：2013-03-22
摘要： A semiconductor photocathode includes an AlXGa1-XN layer (0≦X
摘要翻译： 半导体光电阴极包括通过SiO 2层和形成在AlXGa1-XN层上的含碱金属的层结合到玻璃基板上的Al x Ga 1-x N层（0＆lt; nlE; X <1）。 AlXGa1-XN层包括第一区域，第二区域，第一区域和第二区域之间的中间区域。 第二区域具有通过交替层叠阻挡层和阱层而形成的半导体超晶格结构，中间区域具有通过交替层压阻挡层和阱层而形成的半导体超晶格结构。 当一对相邻的阻挡层和阱层被定义为单位部分时，单位部分中Al的组成比X的平均值随着距离第二区域和SiO 2层之间的界面位置的距离而至少在 中间区域。
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