公开(公告)号：US09202657B1

公开(公告)日：2015-12-01

申请号：US14340012

申请日：2014-07-24

Applicant: Sandia Corporation

Inventor： Paul J. Resnick ,  Eric Langlois

IPC: H01J9/04 ,  H01J3/02 ,  H01J1/308 ,  H01J1/304

CPC classification number: H01J1/308 ,  H01J1/3044 ,  H01J1/36 ,  H01J3/022 ,  H01J9/025 ,  H01J9/14 ,  H01J19/24 ,  H01J19/32 ,  H01J19/46 ,  H01J19/54 ,  H01J21/20

Abstract: Disclosed is an encapsulated micro-diode and a method for producing same. The method comprises forming a plurality columns in the substrate with a respective tip disposed at a first end of the column, the tip defining a cathode of the diode; disposing a sacrificial oxide layer on the substrate, plurality of columns and respective tips; forming respective trenches in the sacrificial oxide layer around the columns; forming an opening in the sacrificial oxide layer to expose a portion of the tips; depositing a conductive material in of the opening and on a surface of the substrate to form an anode of the diode; and removing the sacrificial oxide layer.

Abstract translation: 公开了一种封装微型二极管及其制造方法。 该方法包括在衬底中形成多个柱，其中相应的顶端设置在柱的第一端，尖端限定二极管的阴极; 在基板上设置牺牲氧化物层，多个柱和各个尖端; 在柱周围的牺牲氧化物层中形成相应的沟槽; 在所述牺牲氧化物层中形成开口以暴露所述尖端的一部分; 在所述开口和所述衬底的表面上沉积导电材料以形成所述二极管的阳极; 并去除牺牲氧化物层。