- 专利标题： Nonvolatile semiconductor memory having a word line bent towards a select gate line side
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申请号： US14626566申请日： 2015-02-19
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公开(公告)号： US09202816B2公开(公告)日： 2015-12-01
- 发明人: Takeshi Kamigaichi , Takeshi Murata , Itaru Kawabata
- 申请人： KABUSHIKI KAISHA TOSHIBA
- 申请人地址： JP Minato-ku
- 专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址： JP Minato-ku
- 代理机构： Oblon, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2006-176799 20060627; JP2006-354851 20061228
- 主分类号： H01L27/115
- IPC分类号： H01L27/115 ; G11C16/04 ; G11C5/06
摘要：
A nonvolatile semiconductor memory includes a cell unit having a select gate transistor and a memory cell connected in series, a select gate line connected to the select gate transistor, and a word line connected to the memory cell. One end of the word line is bent to the select gate line side, and a fringe is connected between a bent point and a distal end of the word line.
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