A dual-band infrared detector is provided. The dual-band infrared detector includes a first absorption layer, a barrier layer coupled to the first absorption layer, and a second absorption layer coupled to the barrier layer. The first absorption layer is sensitive to only a first infrared wavelength band and the second absorption layer is sensitive to only a second infrared wavelength band that is different from the first infrared wavelength band. The dual-band infrared detector is capable of detecting the first wavelength band and the second wavelength band by applying a first bias voltage of a first polarity to the first absorption layer and by applying a second bias voltage of a second polarity that is opposite the first polarity to the second absorption layer, wherein the first bias voltage and the second bias voltage each have a magnitude of less than about 500 mV.