发明授权
- 专利标题： Pattern forming method
- 专利标题（中）： 图案形成方法
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申请号： US13239449申请日： 2011-09-22
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公开(公告)号： US09207531B2公开(公告)日： 2015-12-08
- 发明人: Hiroko Nakamura , Koji Asakawa , Shigeki Hattori , Satoshi Tanaka , Toshiya Kotani
- 申请人： Hiroko Nakamura , Koji Asakawa , Shigeki Hattori , Satoshi Tanaka , Toshiya Kotani
- 申请人地址： JP Tokyo
- 专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人： KABUSHIKI KAISHA TOSHIBA
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2010-258009 20101118
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; H01L21/469 ; G03F7/00 ; B81C1/00 ; B82Y10/00 ; B82Y40/00
摘要：
According to one embodiment, a pattern including first and second block phases is formed by self-assembling a block copolymer onto a film to be processed. The entire block copolymer present in a first region is removed under a first condition by carrying out energy beam irradiation and development, thereby leaving a pattern including the first and second block phases in a region other than the first region. The first block phase present in a second region is selectively removed under a second condition by carrying out energy beam irradiation and development, thereby leaving a pattern including the first and second block phases in an overlap region between a region other than the first region and a region other than the second region, and leaving a pattern of second block phase in the second region excluding the overlap region. The film is etched with the left patterns as masks.
公开/授权文献
- US20120127454A1 PATTERN FORMING METHOD 公开/授权日：2012-05-24
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