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公开(公告)号：US09207531B2
公开(公告)日：2015-12-08
申请号：US13239449
申请日：2011-09-22
CPC分类号： G03F7/0002 , B81C1/00031 , B81C2201/0149 , B82Y10/00 , B82Y40/00
摘要： According to one embodiment, a pattern including first and second block phases is formed by self-assembling a block copolymer onto a film to be processed. The entire block copolymer present in a first region is removed under a first condition by carrying out energy beam irradiation and development, thereby leaving a pattern including the first and second block phases in a region other than the first region. The first block phase present in a second region is selectively removed under a second condition by carrying out energy beam irradiation and development, thereby leaving a pattern including the first and second block phases in an overlap region between a region other than the first region and a region other than the second region, and leaving a pattern of second block phase in the second region excluding the overlap region. The film is etched with the left patterns as masks.
摘要翻译： 根据一个实施方案，通过将嵌段共聚物自组装成待加工的膜来形成包括第一和第二嵌段相的图案。 存在于第一区域中的整个嵌段共聚物在第一条件下通过进行能量束照射和显影而除去，从而在第一区域以外的区域留下包括第一和第二嵌段相的图案。 存在于第二区域中的第一块相位通过进行能量束照射和显影而在第二条件下被选择性地去除，从而在包括第一区域和第一区域之间的重叠区域中留下包括第一和第二块相的图案， 区域，并且在除了重叠区域之外的第二区域中留下第二块相位的图案。 用左图案蚀刻该胶片作为掩模。
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公开(公告)号：US08808973B2
公开(公告)日：2014-08-19
申请号：US13402400
申请日：2012-02-22
申请人： Satoshi Mikoshiba , Koji Asakawa , Hiroko Nakamura , Shigeki Hattori , Atsushi Hieno , Tsukasa Azuma , Yuriko Seino , Masahiro Kanno
发明人： Satoshi Mikoshiba , Koji Asakawa , Hiroko Nakamura , Shigeki Hattori , Atsushi Hieno , Tsukasa Azuma , Yuriko Seino , Masahiro Kanno
IPC分类号： G03F7/26
CPC分类号： H01L21/0337 , B81C1/00031 , B81C2201/0149 , G03F7/0757 , G03F7/165 , G03F7/26 , H01L21/3086
摘要： According to one embodiment, there is provided a method of forming a pattern including forming a polymer layer on a substrate, the polymer layer including a first and second regions, selectively irradiating either of the first and second regions with energy rays or irradiating the first and second regions with energy rays under different conditions to cause a difference in surface free energy between the first and second regions, thereafter, forming a block copolymer layer on the polymer layer, and causing microphase separation in the block copolymer layer to simultaneously form first and second microphase-separated structures on the first and second regions, respectively.
摘要翻译： 根据一个实施方案，提供了一种形成图案的方法，包括在基底上形成聚合物层，聚合物层包括第一和第二区域，用能量射线选择性地照射第一和第二区域中的任一个，或者照射第一和第二区域 在不同条件下具有能量射线的第二区域引起第一和第二区域之间的表面自由能的差异，此后在聚合物层上形成嵌段共聚物层，并且使嵌段共聚物层中的微相分离同时形成第一和第二 分别在第一和第二区域上的微相分离结构。
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公开(公告)号：US09073284B2
公开(公告)日：2015-07-07
申请号：US13626415
申请日：2012-09-25
申请人： Atsushi Hieno , Shigeki Hattori , Hiroko Nakamura , Satoshi Mikoshiba , Koji Asakawa , Masahiro Kanno , Yuriko Seino , Tsukasa Azuma
发明人： Atsushi Hieno , Shigeki Hattori , Hiroko Nakamura , Satoshi Mikoshiba , Koji Asakawa , Masahiro Kanno , Yuriko Seino , Tsukasa Azuma
CPC分类号： G03F7/40 , B32B7/04 , B32B2307/40 , B82Y30/00 , G03F7/0002 , G03F7/004 , G03F7/0751 , G03F7/0752 , G03F7/11 , G03F7/165 , G03F7/20
摘要： According to one embodiment, there is provided a method of forming a pattern, including forming a thermally crosslinkable molecule layer including a thermally crosslinkable molecule on a substrate, forming a photosensitive composition layer including a photosensitive composition on the thermally crosslinkable molecule layer, chemically binding the thermally crosslinkable molecule to the photosensitive composition by heating, selectively irradiating the photosensitive composition layer with energy rays, forming a block copolymer layer including a block copolymer on the photosensitive composition layer, and forming a microphase-separated structure in the block copolymer layer.
摘要翻译： 根据一个实施方案，提供了形成图案的方法，包括在基材上形成包含热交联性分子的热交联性分子层，在热交联性分子层上形成包含感光性组合物的感光性组合物层，化学结合 热交联性分子通过加热，用能量射线选择性地照射感光性组合物层，在感光性组合物层上形成包含嵌段共聚物的嵌段共聚物层，在嵌段共聚物层中形成微相分离结构。
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公开(公告)号：US20120214094A1
公开(公告)日：2012-08-23
申请号：US13402400
申请日：2012-02-22
申请人： Satoshi MIKOSHIBA , Koji Asakawa , Hiroko Nakamura , Shigeki Hattori , Atsushi Hieno , Tsukasa Azuma , Yuriko Seino , Masahiro Kanno
发明人： Satoshi MIKOSHIBA , Koji Asakawa , Hiroko Nakamura , Shigeki Hattori , Atsushi Hieno , Tsukasa Azuma , Yuriko Seino , Masahiro Kanno
IPC分类号： G03F7/20 , H01L21/302 , G03F7/00
CPC分类号： H01L21/0337 , B81C1/00031 , B81C2201/0149 , G03F7/0757 , G03F7/165 , G03F7/26 , H01L21/3086
摘要： According to one embodiment, there is provided a method of forming a pattern including forming a polymer layer on a substrate, the polymer layer including a first and second regions, selectively irradiating either of the first and second regions with energy rays or irradiating the first and second regions with energy rays under different conditions to cause a difference in surface free energy between the first and second regions, thereafter, forming a block copolymer layer on the polymer layer, and causing microphase separation in the block copolymer layer to simultaneously form first and second microphase-separated structures on the first and second regions, respectively.
摘要翻译： 根据一个实施方案，提供了一种形成图案的方法，包括在基底上形成聚合物层，聚合物层包括第一和第二区域，用能量射线选择性地照射第一和第二区域中的任一个，或者照射第一和第二区域 在不同条件下具有能量射线的第二区域引起第一和第二区域之间的表面自由能的差异，此后在聚合物层上形成嵌段共聚物层，并且使嵌段共聚物层中的微相分离同时形成第一和第二 分别在第一和第二区域上的微相分离结构。
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5.发明申请Mask pattern data producing method, patterning method, reticle correcting method, reticle manufacturing method, and semiconductor apparatus manufacturing method 失效掩模图案数据制作方法，图案形成方法，掩模版修正方法，掩模版制造方法和半导体装置的制造方法公开(公告)号：US20050196684A1
公开(公告)日：2005-09-08
申请号：US11061599
申请日：2005-02-22
CPC分类号： G03F7/0035 , G03F1/92 , G03F7/40
摘要： A mask pattern data producing method is disclosed, which comprises preparing design pattern data in which contact holes are arranged on part of the grid points in matrix, preparing first mask pattern data in which first opening patterns are arranged on all of the grid points, and designing second mask pattern data in which second opening patterns and third opening patterns are arranged, the second opening patterns being arranged on the grid points at which the contact holes are arranged in the design pattern data to include the first opening patterns, the third opening patterns being arranged on a pair of grid points, which is a pair of diagonal grid points only on which the contact holes are arranged in a unit grid formed by four grid points, to include the first opening patterns arranged on the pair of grid points, in place of the second opening patterns.
摘要翻译： 公开了一种掩模图案数据制作方法，其特征在于，准备设置图形数据，其中接触孔被布置在矩阵中的网格点的一部分上，准备在所有网格点上布置第一开口图案的第一掩模图案数据，以及 设计其中布置有第二开口图案和第三开口图案的第二掩模图案数据，第二开口图案布置在布置在设计图案数据中的接触孔的网格点上以包括第一开口图案，第三开口图案 布置在一对栅格点上，该对栅格点仅在其上以4个格栅点形成的单位格栅布置在其上，以包括布置在该对网格点上的第一开口图案， 第二个打开模式的地方。
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6.发明授权Mask pattern data producing method, patterning method, reticle correcting method, reticle manufacturing method, and semiconductor apparatus manufacturing method 失效掩模图案数据制作方法，图案形成方法，掩模版修正方法，掩模版制造方法和半导体装置的制造方法公开(公告)号：US07560197B2
公开(公告)日：2009-07-14
申请号：US11061599
申请日：2005-02-22
IPC分类号： G03F1/06
CPC分类号： G03F7/0035 , G03F1/92 , G03F7/40
摘要： A mask pattern data producing method is disclosed, which comprises preparing design pattern data in which contact holes are arranged on part of the grid points in matrix, preparing first mask pattern data in which first opening patterns are arranged on all of the grid points, and designing second mask pattern data in which second opening patterns and third opening patterns are arranged, the second opening patterns being arranged on the grid points at which the contact holes are arranged in the design pattern data to include the first opening patterns, the third opening patterns being arranged on a pair of grid points, which is a pair of diagonal grid points only on which the contact holes are arranged in a unit grid formed by four grid points, to include the first opening patterns arranged on the pair of grid points, in place of the second opening patterns.
摘要翻译： 公开了一种掩模图案数据制作方法，其特征在于，准备设置图形数据，其中接触孔被布置在矩阵中的网格点的一部分上，准备在所有网格点上布置第一开口图案的第一掩模图案数据，以及 设计其中布置有第二开口图案和第三开口图案的第二掩模图案数据，第二开口图案布置在布置在设计图案数据中的接触孔的网格点上以包括第一开口图案，第三开口图案 布置在一对栅格点上，该对栅格点仅在其上以4个格栅点形成的单位格栅布置在其上，以包括布置在该对网格点上的第一开口图案， 第二个打开模式的地方。
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公开(公告)号：US08636914B2
公开(公告)日：2014-01-28
申请号：US13431209
申请日：2012-03-27
CPC分类号： G03F7/0002 , B82Y10/00 , B82Y40/00
摘要： According to one embodiment, there is provided a method of forming a pattern, includes forming a guide pattern including a first region having a first surface energy and a second region having a second surface energy on a to-be-processed film, the first and second regions alternately arranged in one direction, forming a block copolymer layer on the guide pattern, and causing microphase separation in the block copolymer layer, the microphase-separated structure is a lamellar block copolymer pattern.
摘要翻译： 根据一个实施例，提供了一种形成图案的方法，包括形成包括具有第一表面能的第一区域和在待处理膜上具有第二表面能的第二区域的引导图案，第一和 第二区域沿一个方向交替布置，在引导图案上形成嵌段共聚物层，并且在嵌段共聚物层中引起微相分离，微相分离结构是层状嵌段共聚物图案。
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8.发明授权Method of forming contact hole pattern in semiconductor integrated circuit device 失效在半导体集成电路器件中形成接触孔图案的方法公开(公告)号：US08101516B2
公开(公告)日：2012-01-24
申请号：US11857275
申请日：2007-09-18
申请人： Toshiya Kotani , Hiroko Nakamura , Koji Hashimoto
发明人： Toshiya Kotani , Hiroko Nakamura , Koji Hashimoto
IPC分类号： H01L21/4763
CPC分类号： H01L21/31144 , H01L21/76811 , H01L21/76813 , H01L21/76816
摘要： A block film is formed on a region which includes a region of an insulating layer where a first hole is to be formed, and in which no second hole is to be formed, and a resist film having openings for forming the first and second holes is formed on the block film and insulating layer. Etching is performed by using the resist film as a mask, thereby forming the first hole in the block film and insulating layer, and the second hole in the insulating layer. The depth of the first hole from the upper surface of the insulating layer is smaller than that of the second hole, so the first hole does not reach the semiconductor substrate.
摘要翻译： 在包括要形成第一孔的绝缘层的区域，并且不形成第二孔的区域上形成阻挡膜，并且具有用于形成第一孔和第二孔的开口的抗蚀剂膜是 形成在阻挡膜和绝缘层上。 通过使用抗蚀剂膜作为掩模进行蚀刻，从而在阻挡膜和绝缘层中形成第一孔，并在绝缘层中形成第二孔。 绝缘层的上表面的第一孔的深度小于第二孔的深度，所以第一孔不到达半导体衬底。
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9.发明申请Method of Forming Contact Hole Pattern in Semiconductor Integrated Circuit Device 失效在半导体集成电路器件中形成接触孔图案的方法公开(公告)号：US20080070402A1
公开(公告)日：2008-03-20
申请号：US11857275
申请日：2007-09-18
申请人： Toshiya Kotani , Hiroko Nakamura , Koji Hashimoto
发明人： Toshiya Kotani , Hiroko Nakamura , Koji Hashimoto
IPC分类号： H01L21/4763 , H01L21/311
CPC分类号： H01L21/31144 , H01L21/76811 , H01L21/76813 , H01L21/76816
摘要： A block film is formed on a region which includes a region of an insulating layer where a first hole is to be formed, and in which no second hole is to be formed, and a resist film having openings for forming the first and second holes is formed on the block film and insulating layer. Etching is performed by using the resist film as a mask, thereby forming the first hole in the block film and insulating layer, and the second hole in the insulating layer. The depth of the first hole from the upper surface of the insulating layer is smaller than that of the second hole, so the first hole does not reach the semiconductor substrate.
摘要翻译： 在包括要形成第一孔的绝缘层的区域，并且不形成第二孔的区域上形成阻挡膜，并且具有用于形成第一孔和第二孔的开口的抗蚀剂膜是 形成在阻挡膜和绝缘层上。 通过使用抗蚀剂膜作为掩模进行蚀刻，从而在阻挡膜和绝缘层中形成第一孔，并在绝缘层中形成第二孔。 绝缘层的上表面的第一孔的深度小于第二孔的深度，所以第一孔不到达半导体衬底。
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10.发明申请公开(公告)号：US20090011370A1
公开(公告)日：2009-01-08
申请号：US12136368
申请日：2008-06-10
申请人： Hiroko Nakamura , Koji Hashimoto , Soichi Inoue , Toshiya Kotani
发明人： Hiroko Nakamura , Koji Hashimoto , Soichi Inoue , Toshiya Kotani
IPC分类号： G03F7/22
CPC分类号： G03F7/0035 , G03F7/091
摘要： A pattern forming method using two layers of resist pattern stacked one on the other has been disclosed. First, a first resist pattern is formed on a to-be-processed film. The first resist pattern is slimmed. On the slimmed first resist pattern and to-be-processed film, a second resist pattern is formed. With the first and second resist patterns as a mask, the film is processed.
摘要翻译： 已经公开了使用彼此堆叠的两层抗蚀剂图案的图案形成方法。 首先，在被处理膜上形成第一抗蚀剂图案。 第一种抗蚀剂图案纤薄。 在细长的第一抗蚀剂图案和被处理膜上，形成第二抗蚀剂图案。 利用第一和第二抗蚀剂图案作为掩模，处理该膜。
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