Invention Grant
- Patent Title: Low temperature salicide for replacement gate nanowires
- Patent Title (中): 替代栅极纳米线的低温自对准硅
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Application No.: US13947316Application Date: 2013-07-22
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Publication No.: US09209086B2Publication Date: 2015-12-08
- Inventor: Josephine B. Chang , Michael A. Guillorn , Gen P. Lauer , Isaac Lauer , Jeffrey W. Sleight
- Applicant: GLOBALFOUNDRIES Inc.
- Agent Michael J. Chang, LLC
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L29/66 ; H01L29/78 ; H01L21/84 ; H01L29/06 ; B82Y10/00 ; B82Y40/00 ; H01L29/775
Abstract:
Techniques for integrating low temperature salicide formation in a replacement gate device process flow are provided. In one aspect, a method of fabricating a FET device is provided that includes the following steps. A dummy gate(s) is formed over an active area of a wafer. A gap filler material is deposited around the dummy gate. The dummy gate is removed selective to the gap filler material, forming a trench in the gap filler material. A replacement gate is formed in the trench in the gap filler material. The replacement gate is recessed below a surface of the gap filler material. A gate cap is formed in the recess above the replacement gate. The gap filler material is etched back to expose at least a portion of the source and drain regions of the device. A salicide is formed on source and drain regions of the device.
Public/Granted literature
- US20150021715A1 Low Temperature Salicide for Replacement Gate Nanowires Public/Granted day:2015-01-22
Information query
IPC分类:
