发明授权
- 专利标题： Semiconductor devices and methods of manufacture thereof
- 专利标题（中）： 半导体器件及其制造方法
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申请号： US14015808申请日： 2013-08-30
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公开(公告)号： US09209140B2公开(公告)日： 2015-12-08
- 发明人: Yu-Feng Chen , Kai-Chiang Wu , Chun-Lin Lu , Hung-Jui Kuo
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L23/58
- IPC分类号： H01L23/58 ; H01L23/498 ; H01L23/00 ; H01L23/16 ; H01L23/544 ; H01L23/10 ; H01L25/065 ; H01L25/00 ; H01L21/56 ; H01L23/48 ; H01L23/14 ; H01L21/48 ; H01L21/768
摘要：
Semiconductor devices and methods of manufacture thereof are disclosed. In some embodiments, a semiconductor device includes a substrate, and a plurality of contact pads disposed over the substrate. The contact pads are arranged in a ball grid array (BGA), and the BGA includes a plurality of corners. A metal dam is disposed around each of the plurality of corners of the BGA.
公开/授权文献
- US20150061127A1 Semiconductor Devices and Methods of Manufacture Thereof 公开/授权日：2015-03-05
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