Invention Grant
- Patent Title: Methods of patterning features having differing widths
- Patent Title (中): 具有不同宽度的图案特征的方法
-
Application No.: US13874577Application Date: 2013-05-01
-
Publication No.: US09214360B2Publication Date: 2015-12-15
- Inventor: Linus Jang , Soon-Cheon Seo , Ryan O. Jung
- Applicant: GLOBALFOUNDRIES Inc. , International Business Machines Corporation
- Applicant Address: KY Grand Cayman US NY Armonk
- Assignee: GLOBALFOUNDRIES Inc.,International Business Machines Corporation
- Current Assignee: GLOBALFOUNDRIES Inc.,International Business Machines Corporation
- Current Assignee Address: KY Grand Cayman US NY Armonk
- Agency: Amerson Law Firm, PLLC
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/3213 ; H01L21/033 ; H01L21/28 ; H01L21/8238

Abstract:
Disclosed herein are methods of patterning features that have differing widths. In one example, the method includes forming a layer of material above a semiconductor substrate, forming a masking layer above the layer of material, wherein the masking layer is comprised of a first plurality features positioned above a first region of the semiconductor substrate and a second plurality of features positioned above a second region of the semiconductor substrate, wherein the first and second plurality of features have the same pitch spacing and wherein the first and second plurality of features have different widths, and performing at least one etching process on the layer of material through the masking layer.
Public/Granted literature
- US20140329388A1 METHODS OF PATTERNING FEATURES HAVING DIFFERING WIDTHS Public/Granted day:2014-11-06
Information query
IPC分类: