Invention Grant
US09214514B2 Mechanisms for forming semiconductor device having stable dislocation profile
有权
用于形成具有稳定位错分布的半导体器件的机理
- Patent Title: Mechanisms for forming semiconductor device having stable dislocation profile
- Patent Title (中): 用于形成具有稳定位错分布的半导体器件的机理
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Application No.: US14080220Application Date: 2013-11-14
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Publication No.: US09214514B2Publication Date: 2015-12-15
- Inventor: Min-Hao Hong , Shiu-Ko Jangjian , Chih-Tsung Lee , Miao-Cheng Liao
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/70 ; H01L21/8238 ; H01L27/085 ; H01L27/092 ; H01L29/08 ; H01L29/66 ; H01L29/78
Abstract:
Embodiments that relate to mechanisms for providing a stable dislocation profile are provided. A semiconductor substrate having a gate stack is provided. An opening is formed adjacent to a side of the gate stack. A first part of an epitaxial growth structure is formed in the opening. A second part of the epitaxial growth structure is formed in the opening. The first part and the second part of the epitaxial growth structure are formed along different directions.
Public/Granted literature
- US20150132913A1 MECHANISMS FOR FORMING SEMICONDUCTOR DEVICE HAVING STABLE DISLOCATION PROFILE Public/Granted day:2015-05-14
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