发明授权
- 专利标题： Reduced light degradation due to low power deposition of buffer layer
- 专利标题（中）： 由于缓冲层的低功率沉积而降低光衰
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申请号： US13407006申请日： 2012-02-28
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公开(公告)号： US09214577B2公开(公告)日： 2015-12-15
- 发明人: Keith E. Fogel , Augustin J. Hong , Jeehwan Kim , Devendra K. Sadana
- 申请人： Keith E. Fogel , Augustin J. Hong , Jeehwan Kim , Devendra K. Sadana
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 代理机构： Tutunjian & Bitetto, P.C.
- 代理商 Louis J. Percello
- 主分类号： H01L31/0224
- IPC分类号： H01L31/0224 ; H01L31/0232 ; H01L31/075 ; H01L31/18
摘要：
Methods for forming a photovoltaic device include forming a buffer layer between a transparent electrode and a p-type layer. The buffer layer includes a work function that falls substantially in a middle of a barrier formed between the transparent electrode and the p-type layer to provide a greater resistance to light induced degradation. An intrinsic layer and an n-type layer are formed over the p-type layer.