Invention Grant
- Patent Title: Compound semiconductor devices and methods for fabricating the same
- Patent Title (中): 复合半导体器件及其制造方法
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Application No.: US13880708Application Date: 2011-10-26
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Publication No.: US09214596B2Publication Date: 2015-12-15
- Inventor: Sung-Jin An , Dong-Gun Lee , Seok-Han Kim
- Applicant: Sung-Jin An , Dong-Gun Lee , Seok-Han Kim
- Applicant Address: KR KR
- Assignee: LG Siltron Inc.,Kumoh National Institute of Technology Industry-Academic Cooperation Foundation
- Current Assignee: LG Siltron Inc.,Kumoh National Institute of Technology Industry-Academic Cooperation Foundation
- Current Assignee Address: KR KR
- Agency: Lewis Roca Rothgerber LLP
- International Application: PCT/KR2011/008019 WO 20111026
- International Announcement: WO2012/057517 WO 20120503
- Main IPC: H01L33/02
- IPC: H01L33/02 ; H01L21/02 ; H01L33/00 ; H01L33/12 ; H01L21/36 ; H01L29/06 ; B82Y40/00
Abstract:
According to the present invention, a method for manufacturing a compound semiconductor comprises: forming a graphene-derived material layer on either a first selected substrate or a first selected compound semiconductor layer; forming a second compound semiconductor layer of at least one layer on at least said graphene-derived material layer, and changing the graphene-derived material layer so as to separate said second compound semiconductor layer of at least one layer.
Public/Granted literature
- US20130200424A1 COMPOUND SEMICONDUCTOR DEVICES AND METHODS FOR FABRICATING THE SAME Public/Granted day:2013-08-08
Information query
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