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公开(公告)号:US20130285013A1
公开(公告)日:2013-10-31
申请号:US13880706
申请日:2011-10-26
申请人: Sung-Jin An , Dong-Gun Lee , Seok-Han Kim
发明人: Sung-Jin An , Dong-Gun Lee , Seok-Han Kim
CPC分类号: H01L33/02 , B82Y40/00 , H01L21/02104 , H01L21/0237 , H01L21/02439 , H01L21/02444 , H01L21/02458 , H01L21/02488 , H01L21/02499 , H01L21/02502 , H01L21/0254 , H01L21/38 , H01L29/06 , H01L33/007 , H01L33/12 , H01L33/32 , Y10S977/734
摘要: Provided are a compound semiconductor device and a manufacturing method thereof. A substrate and a graphene oxide layer are provided on the substrate. A first compound semiconductor layer is provided on the graphene oxide layer. The first compound semiconductor layer is selectively grown from the substrate exposed by the graphene oxide.
摘要翻译: 提供一种化合物半导体器件及其制造方法。 衬底和石墨烯氧化物层设置在衬底上。 在石墨烯氧化物层上设置第一化合物半导体层。 从由石墨烯氧化物曝光的基板选择性地生长第一化合物半导体层。
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公开(公告)号:US20130200424A1
公开(公告)日:2013-08-08
申请号:US13880708
申请日:2011-10-26
申请人: Sung-Jin An , Dong-Gun Lee , Seok-Han Kim
发明人: Sung-Jin An , Dong-Gun Lee , Seok-Han Kim
CPC分类号: H01L33/02 , B82Y40/00 , H01L21/02104 , H01L21/0237 , H01L21/02439 , H01L21/02444 , H01L21/02458 , H01L21/02488 , H01L21/02499 , H01L21/02502 , H01L21/0254 , H01L21/38 , H01L29/06 , H01L33/007 , H01L33/12 , H01L33/32 , Y10S977/734
摘要: According to the present invention, a method for manufacturing a compound semiconductor comprises: forming a graphene-derived material layer on either a first selected substrate or a first selected compound semiconductor layer; forming a second compound semiconductor layer of at least one layer on at least said graphene-derived material layer, and changing the graphene-derived material layer so as to separate said second compound semiconductor layer of at least one layer.
摘要翻译: 根据本发明,一种化合物半导体的制造方法包括:在第一选定基板或第一选定化合物半导体层上形成石墨烯材料层; 在至少所述石墨烯衍生的材料层上形成至少一层的第二化合物半导体层,以及改变所述石墨烯衍生的材料层,以将至少一层的所述第二化合物半导体层分离。
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公开(公告)号:US09214596B2
公开(公告)日:2015-12-15
申请号:US13880708
申请日:2011-10-26
申请人: Sung-Jin An , Dong-Gun Lee , Seok-Han Kim
发明人: Sung-Jin An , Dong-Gun Lee , Seok-Han Kim
CPC分类号: H01L33/02 , B82Y40/00 , H01L21/02104 , H01L21/0237 , H01L21/02439 , H01L21/02444 , H01L21/02458 , H01L21/02488 , H01L21/02499 , H01L21/02502 , H01L21/0254 , H01L21/38 , H01L29/06 , H01L33/007 , H01L33/12 , H01L33/32 , Y10S977/734
摘要: According to the present invention, a method for manufacturing a compound semiconductor comprises: forming a graphene-derived material layer on either a first selected substrate or a first selected compound semiconductor layer; forming a second compound semiconductor layer of at least one layer on at least said graphene-derived material layer, and changing the graphene-derived material layer so as to separate said second compound semiconductor layer of at least one layer.
摘要翻译: 根据本发明,一种化合物半导体的制造方法包括:在第一选定基板或第一选定化合物半导体层上形成石墨烯材料层; 在至少所述石墨烯衍生的材料层上形成至少一层的第二化合物半导体层,以及改变所述石墨烯衍生的材料层,以将至少一层的所述第二化合物半导体层分离。
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公开(公告)号:US08878233B2
公开(公告)日:2014-11-04
申请号:US13880706
申请日:2011-10-26
申请人: Sung-Jin An , Dong-Gun Lee , Seok-Han Kim
发明人: Sung-Jin An , Dong-Gun Lee , Seok-Han Kim
CPC分类号: H01L33/02 , B82Y40/00 , H01L21/02104 , H01L21/0237 , H01L21/02439 , H01L21/02444 , H01L21/02458 , H01L21/02488 , H01L21/02499 , H01L21/02502 , H01L21/0254 , H01L21/38 , H01L29/06 , H01L33/007 , H01L33/12 , H01L33/32 , Y10S977/734
摘要: Provided are a compound semiconductor device and a manufacturing method thereof. A substrate and a graphene oxide layer are provided on the substrate. A first compound semiconductor layer is provided on the graphene oxide layer. The first compound semiconductor layer is selectively grown from the substrate exposed by the graphene oxide.
摘要翻译: 提供一种化合物半导体器件及其制造方法。 衬底和石墨烯氧化物层设置在衬底上。 在石墨烯氧化物层上设置第一化合物半导体层。 从由石墨烯氧化物曝光的基板选择性地生长第一化合物半导体层。
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