发明授权
- 专利标题: Power supply circuit
- 专利标题(中): 电源电路
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申请号: US13008414申请日: 2011-01-18
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公开(公告)号: US09219362B2公开(公告)日: 2015-12-22
- 发明人: Shigeto Kobayashi , Kouichi Yamada , Yoshitaka Ueda , Atsushi Wada
- 申请人: Shigeto Kobayashi , Kouichi Yamada , Yoshitaka Ueda , Atsushi Wada
- 申请人地址: US AZ Phoenix
- 专利权人: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- 当前专利权人: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- 当前专利权人地址: US AZ Phoenix
- 优先权: JP2010-010304 20100120
- 主分类号: H02J1/10
- IPC分类号: H02J1/10 ; H02J1/08 ; H03K19/0175 ; G06F1/26 ; H03L5/00
摘要:
A power supply circuit generates the internal power supply voltage intVCC from a first power supply capable of supplying a first power supply voltage V1 and a second power supply capable of supplying a second power supply voltage V2, which is lower than the first power supply voltage V1. A first transistor TR1 is provided between the first power supply and an output node, whereas a second transistor TR2 is provided between the second power supply and the output node. A first supply unit supplies the inverted value of an output voltage of the first power supply or the inverted value of a voltage corresponding to the output voltage of the first power supply, to the gate input of the first transistor TR1. A second supply unit supplies the output voltage of the first power supply or the voltage corresponding to the output voltage of the first power supply, to the gate input of the second transistor TR2.
公开/授权文献
- US20110175449A1 POWER SUPPLY CIRCUIT 公开/授权日:2011-07-21
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