Invention Grant
- Patent Title: Deposition of rutile films with very high dielectric constant
- Patent Title (中): 沉积介电常数很高的金红石膜
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Application No.: US13721606Application Date: 2012-12-20
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Publication No.: US09222170B2Publication Date: 2015-12-29
- Inventor: Sergey Barabash , Dipankar Pramanik
- Applicant: Intermolecular, Inc.
- Applicant Address: US CA San Jose
- Assignee: Intermolecular, Inc.
- Current Assignee: Intermolecular, Inc.
- Current Assignee Address: US CA San Jose
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L23/58 ; C23C16/40 ; H01L45/00 ; H01L27/12 ; H01L27/24 ; C23C16/02 ; C30B25/04 ; C30B29/16 ; C30B29/60 ; H01L29/66 ; H01L29/78 ; B82Y40/00 ; H01L27/06 ; H01L49/02

Abstract:
Anisotropic materials, such as rutile TiO2, can exhibit dielectric constant of 170 along the tetragonal axis of (001) direction, and dielectric constant of 86 along directions perpendicular to the tetragonal axis. Layer of anisotropic material nanorods, such as TiO2 nanorods, can form a seed layer to grow a dielectric layer that can exhibit the higher dielectric constant value in a direction parallel to the substrate surface. The anisotropic layer can then be patterned to expose a surface normal to the high dielectric constant direction. A conductive material can be formed in contact with the exposed surface to create an electrode/dielectric stack along the direction of high dielectric constant.
Public/Granted literature
- US20140175422A1 Deposition of Rutile Films with Very High Dielectric Constant Public/Granted day:2014-06-26
Information query
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