Invention Grant
US09224482B2 Hot-carrier injection programmable memory and method of programming such a memory
有权
热载体注入可编程存储器和编程这种存储器的方法
- Patent Title: Hot-carrier injection programmable memory and method of programming such a memory
- Patent Title (中): 热载体注入可编程存储器和编程这种存储器的方法
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Application No.: US14528780Application Date: 2014-10-30
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Publication No.: US09224482B2Publication Date: 2015-12-29
- Inventor: Francesco La Rosa , Stephan Niel , Arnaud Regnier , Julien Delalleau
- Applicant: STMicroelectronics (Rousset) SAS
- Applicant Address: FR Rousset
- Assignee: STMicroelectronics (Rousset) SAS
- Current Assignee: STMicroelectronics (Rousset) SAS
- Current Assignee Address: FR Rousset
- Agency: Seed IP Law Group PLLC
- Priority: FR1360743 20131031
- Main IPC: G11C16/00
- IPC: G11C16/00 ; G11C16/10 ; G11C16/34 ; G11C16/04 ; H01L29/788 ; H01L27/115 ; H01L29/423

Abstract:
The present disclosure relates to a memory comprising at least one word line comprising a row of split gate memory cells each comprising a selection transistor section comprising a selection gate and a floating-gate transistor section comprising a floating gate and a control gate. According to the present disclosure, the memory comprises a source plane common to the memory cells of the word line, to collect programming currents passing through memory cells during their programming, and the selection transistor sections of the memory cells are connected to the source plane. A programming current control circuit is configured to control the programming current passing through the memory cells by acting on a selection voltage applied to a selection line.
Public/Granted literature
- US20150117109A1 HOT-CARRIER INJECTION PROGRAMMABLE MEMORY AND METHOD OF PROGRAMMING SUCH A MEMORY Public/Granted day:2015-04-30
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