Invention Grant
- Patent Title: Etching method and plasma processing apparatus
- Patent Title (中): 蚀刻方法和等离子体处理装置
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Application No.: US14400381Application Date: 2013-05-27
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Publication No.: US09224616B2Publication Date: 2015-12-29
- Inventor: Masafumi Urakawa
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Pearne & Gordon LLP
- Priority: JP2012-132830 20120612
- International Application: PCT/JP2013/064650 WO 20130527
- International Announcement: WO2013/187219 WO 20131219
- Main IPC: H01L21/308
- IPC: H01L21/308 ; H01L21/3065 ; H01L21/3213 ; H01J37/32 ; H01L21/67

Abstract:
A method of etching an etching target layer containing polycrystalline silicon includes preparing a target object including the etching target layer and a mask formed on the etching target layer; and etching the etching target layer with the mask. Further, the mask includes a first mask portion formed of polycrystalline silicon and a second mask portion interposed between the first mask portion and the etching target layer and formed of silicon oxide. Furthermore, in the etching of the etching target layer, a first gas for etching the etching target layer, a second gas for removing a deposit adhering to the mask, and a third gas for protecting the first mask portion are supplied into a processing vessel in which the target object is accommodated, and plasma of these gases is generated within the processing vessel.
Public/Granted literature
- US20150140828A1 ETCHING METHOD AND PLASMA PROCESSING APPARATUS Public/Granted day:2015-05-21
Information query
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